PUBLICATIONS
2010
Németh A, Kozma P, Hülber T, Kurunczi S, Horváth R,
Petrik P, Muskotál A, Vonderviszt F, Hős Cs, Fried M, Gyulai J,
Bársony I: In situ Spectroscopic Ellipsometry Study of Pretein
Immobilization on Different Substrates Using Liquid Cells, Sensor
Letters, Vol.8)2010)1-6
Gyulai J; Gyúró I: The "EÖTVÖS" program in
space research - 1979-1986, Materials Science Forum 649(2010) 11-16, in
Solidification and gravity, Eds. Roósz A; Mertiger V;
Barkóczy P; Hoó Cs
2009
Gyulai, J: Thirtieth Anniversary of Biannular International Conference
on Ion Beam Modification of Materials, IBMM - From "Ion Implantation"
to "Ion Beam Modification", Nucl. Instr. Methods B267(2009)1217-1221
Osváth Z; Vértesy G; Horváth ZE; Gyulai J;
Biró LP: Ion Irradiation of Carbon nanotubes: a STM Study, AIP
Conf. Proc. Volume 1099(2009)361-364, in Application of Accelerators in
Research and Industry: 20th Intl. Conf., 10-15 August, 2008, Fort
Worth, texas
2008
Horvath ZE; Koos AA;
Kertész K; Molnár Gy; Vértesy G; Bein MC; Frigyes
T; Mészáros Z; Gyulai J; Biró LP: The role of
defects in chemiscal sensing properties of carbon nanotube films, Appl.
Phys. A, 93(2008)495-504
Gyulai J, Battistig G, Lohner
T, Hajnal Z: Wedge etching by anodic
oxidation and determination of shallow boron profile by ion beam
analysis, NIM B
266 1434–1438 (2008)
Petrik P; Khánh NQ; Li
Jian; Chen Jie; Collins RW; Fried M; Radnóczi GZ; Lohner
T; Gyulai J, Ion
implantation induced disorder in single-crystal
and sputter-deposited polycrystalline CdTe characterized by
ellipsometry and
backscattering spectrometry, phys. stat. sol. (c) 5,
No. 5, (2008) 1358–1361
2007
. Horváth
E, Németh A, Koós AA, Bein MC, Tóth AL,
Horváth ZE, Biró LP, Gyulai J: Focused
ion beam based sputtering yield measurements on ZnO and Mo thin films,
Superlattices and Microstructures 42: 392-397 (2007)
. Osváth Z, Tapasztó L, Vértesy G,
Koós AA,
Horváth ZE, Gyulai J, Biró LP: STM imaging of carbon
nanotube point defects,
Physica Status Solidi A 204: 1825-1829 (2007)
2006
.
Horváth EZ, Koós AA, Kertész
K, Vértesy Z, Molnár G, Ádám M, Dücső
C, Gyulai J,
Biró LP: Mats of Functionalized Carbon Nanotubes for Gas/Vapor
Sensing,
Nanopages 1(2): 209-217 (2006)
·
H. Kitano, S. Abo, M. Mizutani, J. Tsuchimoto, T. Lohner, J. Gyulai, F.
Wakaya, M. Takai: Compositional analysis of HfxSiyO1-x-y thin filmas by
medium energy ion scattering (MEIS) analysis, Nuc. Instr. Meth. B249
(2006)246-249
·
Z. Osváth, G. Vértesy, L. Tapasztó ,
F. Wéber, Z.E. Horváth, J. Gyulai, L.P.
Biró, Scanning tunneling microscopy investigation of
atomic-scale carbon nanotube defects produced by Ar+ ion irradiation,
Materials Science and Engineering C 26 (2006) 1194 – 1197
·
Zsolt E. Horváth, Antal A. Koós,
Krisztián Kertész, Zofia Vértesy,
György Molnár, Mária
Ádám, Csaba Dücső, József
Gyulai, and László P. Biró: Mats of
Functionalized CaRbon Nanotubes for Gas/Vapor Sensing, Nanopages
1(2006)209-218
·
Antal A. Koos, Krisztian Kertesz, Maria Adam, Csaba Ducso, Zsolt E.
Horvath, Laszlo P. Biro, Istvan Barsony, Jozsef Gyulai Zoltan Konya,
and Imre Kiricsi: Carbon Nanotubes –
Towards Artificial Nose Implementation, IEEE SENSORS 2006, EXCO, Daegu,
Korea / October 22~25, 2006
·
G. Pető, N.Q. Khánh, Z.E. Horváth, G.
Molnár, J. Gyulai, E. Kótai, L. Guczi, L. Frey:
Nanoscale morphology and photoemission of arsenic implanted germanium
films, J. Appl. Phys. 99 (2006) 084304.
2005
·
Z. Zolnai, A. Ster, N. Q. Khánh, E. Kótai, M.
Posselt, G. Battistig, T. Lohner, and J. Gyulai: Ion Beam Analysis and
Computer Simulation of Damage Accumulation in Nitrogen Implanted
6H-SiC: Effects of Channeling, Matl. Sci. Forum 483-485(2005) 637-640
·
Biro LP, Horvath ZE, Szalmas L, Kertesz K, Weber F, Juhasz G, Radnoczi,
G, Gyulai J, Bera D, Brinley E, Kuiry SC, et al. Optoelectronically
automated system for carbon nanotubes synthesis via arc-discharge in
solution, Rev. Sci. Instruments 76(2005)033903
·
P. Petrik, É Vázsonyi, M. Fried, J. Volk, G. T.
Andrews, A. L. Tóth, Cs. S. Daróczi, I.
Bársony, J. Gyulai, “Optical models for the
ellipsometric characterisation of porous silicon structures”,
4th International Conference, ”Porous Semiconductors-Science
and Technology” (PSST-2004), 15-19 March 2004,
Valencia-Cullera, Spain, phys. stat. sol. (c) 2,
(2005)3319–3323
·
P. Petrik, M. Fried, T. Lohner, O. Polgár, J. Gyulai, Cayrel
and D. Alquier: Optical models for cavity profiles in high-dose
helium-implanted and annealed silicon measured by ellipsometry,
J. Appl. Phys. 97(2005) 123514
·
P. Petrik*1, É. Vázsonyi1, M. Fried1, J. Volk1,
G. T. Andrews2, A. L. Tóth1, Cs. S. Daróczi1, I.
Bársony1, and J. Gyulai Optical models for the ellipsometric
characterisation of porous silicon structures, phys. stat. sol. (c) 2,
(2005) 3319–3323
·
Z. Osváth, G. Vértesy, L. Tapasztó, F.
Wéber, Z. E. Horváth, J. Gyulai, and L. P.
Biró: Atomically resolved STM images of carbon nanotube
defects produced by Ar+ irradiation, Phys. Rev. B 72(2005)045429
·
G. Pető, G. Molnár, Z. E. Horváth, Cs. S.
Daróczi, É. Zsoldos, and J. Gyulai: Formation of
epitaxial erbium-silicide islands on Si(001), Surface Science
578 (2005): 142-148, if: 2.168
2004
· M. Fried, P. Petrik, T. Lohner, N. Q.
Khánh, O. Polgár, and J. Gyulai; Dose-dependence
of ion implantation-caused damage in silicon measured by ellipsometry
and backscattering spectrometry, Thin Solid Films 455-456 (2004)
404-409.
· P. Petrik, F. Cayrel, M. Fried, O.
Polgár, T. Lohner, L. Vincent, D. Alquier, J. Gyulai; Depth
distribution of disorder and cavities in high dose helium implanted
silicon characterized by spectroscopic ellipsometry, Thin Solid Films
455-456 (2004) 344-348.
· P. Petrik, E. R. Shaaban, T. Lohner, G.
Battistig, M. Fried, J. Garcia Lopez, Y. Morilla, O. Polgár,
and J. Gyulai; Ion implantation-caused damage in SiC measured by
spectroscopic ellipsometry, Thin Solid Films 455-456 (2004) 239-243.
· C. Schmidt, C. Schneider, P. Petrik, M. Fried,
I. Bársony, J. Gyulai, H. Ryssel; Optical characterization
of ferroelectric Strontium-Bismuth-Tantalate (SBT) thin films, Thin
Solid Films 455-456C (2004) 494-499.
·
L.P. Biro, G.I. Mark, Z.E. Horvath, K. Kertesz, J. Gyulai, J.B.
Nagy, Ph. Lambin; Carbon nanoarchitectures containing
non-hexagonal rings: ‘‘necklaces of
pearls’’, Carbon 42 (2004) 2561–2566
Z. Osváth, G. Vértesy, G. Pető, I.
Szabó, J. Gyulai, W. Maser and L. P. Biró, STM
investigation of irradiated carbon nanotubes, Electronic Properties of
Synthetic Nanostructures: XVIII Int. Winterschool on Electronic
Properties of Novel Materials, AIP Conference Proceedings Vol. 723
(2004) 149-152.
J. Gyulai: Micro- and Nanotechnologies, Some Recent
Improvements, Proc. Int. Conf. on Tools, ICT-2004, Es. I.
Dudas, O. Szabo, and G. Varga, (Univ. of Miskolc, 2004), pp. 3-8.
J. Gyulai: Micro- and Nanotechn ology Revolution – Its Impact
with Machine Industry, Proc. 11th Int. Conf. on Machine Design and
Production, UMTIK 2004 (UMTIK, Middle-East Technical Univertsity,
Ankara, Turkey) pp. 335-340.
2003
Osváth,Z.;Fulcheri,L.;Márk,G..I.;Tapasztó,L.;Gyulai,J.;Biró,L.,P.:
STM and STS INVESTIGATION of few wall carbon nanotubes containing
non-hexagonal carbon rings; in Nanotechnology, Vol. 5118,
Ed.Vajtai,R.;Aymerich,X.;Kish,L.,B.;Rubio,A., Proceedings of SPIE - The
International Society for Optical Engineering,2003) , p. 587.
Tapasztó,L;Márk,G,I;Gyulai,J;Lambin,Ph;Kónya,Z;Biró,L,P:
’Geometrical effects of wave functions of carbon
nanosystems”; in Electronic Properties of Novel Materials --
Molecular Nanostructures, Vol. 685, Ser. AIP Conference Proceedings,
Ed. Kuzmany,H.;Fink,J.;Mehring,M.;Roth,S.(American Institute of
Physics,Melville, New York,2003) , p. 439
P. Petrik, N. Q. Khánh, Z. E. Horváth, Z. Zolnai,
I. Bársony, T. Lohner, M. Fried, J. Gyulai, C. Schmidt, C.
Schneider, H. Ryssel, “Non-destructive characterization of
strontium bismuth tantalate films”, EMRS-2002 conference,
Strasbourg, Materials Science in Semiconductor Processing
5(2003)141
A.A. Koós, R. Ehlich, Z.E. Horváth, Z.
Osváth, J. Gyulai, J.B. Nagy, L.P. Biró: STM and
AFM investigation of coiled carbon nanotubes produced by laser
evaporation of fullerene, Materials Science and Engineering C 23 (2003)
275–278
Essam Ramadan Shaaban, T. Lohner, P. Petrik, N. Q. Khánh, M.
Fried, O. Polgar, J. Gyulai: Determination of the Complex Dielectric
Function of Ion Implanted Amorphous SiC by Spectroscopic Ellipsometry,
physica status solidi (a) 195(2003)277-281
P. Petrik, O. Polgar, M. Fried, T. Lohner, N. Q. Khanh, and J. Gyulai:
Ellipsometric characterization of damage profiles using an advanced
optical model, J. Appl. Phys. 93(5) (2003)
1987
L. P. Biró, Z. E. Horváth, L. Szalmás,
K. Kertész, F. Wéber, G. Juhász, G
Radnóczi and J. Gyulai: Continuous Carbon Nanotube
Production in Underwater AC Electric Arc, Chem. Phys. Lett.
372(2003)399-402
E. R. Shaaban, T. Lohner, I. Pintér, P. Petrik, N.Q.
Khánh, Z.E. Horváth, and J. Gyulai:
Characterization of near surface region of plasma immersion ion
implanted silicon using Rutherford backscattering spectrometry,
transmission electron microscopy and spectroscopic ellipsometry,
Vacuum,
71(2003)27-31
J. Gyulai: How will materials cope with future manufacturing?
Advanced Technologies in Manufacturing, WESIC03-176-paper.pdf
Z. Osváth, A. A. Koós, Z. E. Horváth,
J. Gyulai, A.M. Benito, M.T. Martínez, W. Maser, and L.P.
Biró: STM observation of Y-branched carbon nanotubes and
nano-knees produced by the arc discharge method, Mat. Sci.
Eng. C, 23 (2003) 561 - 564
2002
L.P.Biró, R.Ehlich, Z. Osváth, A.
Koós, Z. E. Horváth, J. Gyulai, J. B.Nagy: Room
temperature growth of single wall coiled carbon nanotubes and
Y-branches, Matl. Sci. and Eng., C 19(2002)3-7
R. Ehlich, L.P. Biró, C. Stanciu, Z.E. Horvath, and J.
Gyulai: Room Temperature Growth of Single Wall CarboN Nanotube
Y-branches, in Electronic Properties of Molecular Nanostructures, H.
Kuzmany, J.Fink, M. Mehring, S. Roth, Eds., AIP Conf. Proceedings, Vol.
591, pp.175-178
L.P. Biró, N.Q. Khanh, Z.E: Horvath, Z. Vertesy, A.
Kocsonya, Z. Kónya, Z. Osváth, A.
Koós, J. Gyulai, X.B. Zhang, G. Van Tendeloo, A. Fonseca,
and J.B. Nagy: Catalyst Traces after Chemical Purification in CVD Grown
Carbon Nanotubes, (a) in Electronic Properties of Molecular
Nanostructures, H. Kuzmany, J.Fink, M. Mehring, S. Roth, Eds., AIP
Conf. Proceedings, Vol. 591, pp. 183-186, (b) Matl. Sci. and Eng., C
19(2002)9-13
G.I. Márk, L.P. Biró, A. Koós, Z.
Osváth, J. Gyulai, A.M. Benito, P.A. Thiry, and P. Lambin:
Charge Spreading Effects during 3D Tunneling through a Supported Carbon
Nanotube, in Electronic Properties of Molecular Nanostructures, H.
Kuzmany, J.Fink, M. Mehring, S. Roth, Eds., AIP Conf. Proceedings, Vol.
591, 2001, pp. 364-367
Petrik P, Polgár O, Lohner T, Fried M, Khánh NQ,
and Gyulai J: Ellipsometric study of ion implantation-caused damage in
single-crystalline silicon -an advanced optical model, GADEST-2001, 9th
Autumn Meeting on Gettering and Defect Engineering in Semiconductor
Technology, Solid State Phenomena, 82-84, 765-770 (2002).
Z. Zolnai, N.Q. Khánh, E. Szilágyi, E.
Kótai, A. Ster, M. Posselt, T. Lohner, and J. Gyulai:
Investigation of ion implantation-induced damage in the carbon and
silicon sublattices of 6H-SiC, Diamond and Related Matls.
11(2002)1239-1242
P. Petrik, T. Lohner, M. Fried, J. Gyulai, U. Boell, R. Berger, and W.
Lehnert: Ellipsometric study of the polysilicon/thin
oxide/single-crystalline silicon structure and its change upon
annealing, J. Appl. Phys. 92(2002)2374-2377
L.P.Biró, R.Ehlich, Z. Osváth, A.
Koós, Z. E. Horváth, J. Gyulai, and J. B.Nagy:
From straight carbon nanotubes to Y-brancsed and coiled nanotubes,
Diamond and Related Materials 11(2002)1081-1085
Z. Osváth, A. A. Koós, Z. E. Horváth,
J. Gyulai, A.M. Benito, M.T. Martínez, W. K. Maser, L.P.
Biró : Arc-grown Y-branched carbon nanotubes observed by
scanning tunneling microscopy (STM) Chem. Phys. Lett., 365 (2002) 338
– 342
2001
E. Szilágyi, N.Q. Khánh, Z.E. Horváth,
T. Lohner, G. Battistig, Z. Zolnai, E. Kótai, J. Gyulai: Ion
Bombardment Induced Damage in Silicon Carbide Studied by Ion Beam
Analytical Methods, Materials Science Forum 353-356 (2001) 271-274.
E. Szilágyi, E. Kótai, N.Q. Khánh, Z.
Zolnai, G. Battistig, T. Lohner, and J. Gyulai: Ion Implantation
Induced Damage in Silicon Carbide Studied by Non-Rutherford Elastic
Backscattering, Proc. Int. Conf. Ion Implantation Technology (Eds. H.
Ryssel, L. Frey, J.Gyulai, and H. Glawischnig, IEEE, Inc., Piscataway,
00EX462) pp. 131-133
P.Nagy, B.Szabo, Zs. Szabo, K.Havancsak, L.P.Biro, J.Gyulai: A model
for the hillock formation on graphite surfaces by 246 MeV Kr+ ions,
Ultramicroscopy, v86 (2001) pp31-38
L. P. Biró, G. I. Márk, J. Gyulai, and P. A.
Thiry: STM and AFM investigation of carbon nanotubes, Materials
Structure 6(1999)104-106
N. Dinu, I.V: Antonova, J. Gyulai, V.A. Skuratov, and A.I. Oprea:
Dopant redistribution in silicon enhanced by hundred MeV heavy ion
irradiation, Proc. Int. Conf. Ion Implantation Technology (Eds. H.
Ryssel, L. Frey, J.Gyulai, and H. Glawischnig, IEEE, Inc., Piscataway,
00EX462, 2001) pp.147-150
P. Petrik, O. Polgár, M. Fried, T. Lohner, N.Q: Khanh, and
J. Gyulai: Advanced optical model for the ellipsometric study of ion
implantation-caused damage depth profiles in single-crystalline
silicon, Proc. Int. Conf. Ion Implantation Technology (Eds. H. Ryssel,
L. Frey, J.Gyulai, and H. Glawischnig, IEEE, Inc., Piscataway, 00EX462,
2001) pp.151-154
Toth AL, Dozsa L, Gyulai J, Giannazzo F, Raineri V; SCTS: scanning
capacitance transient spectroscopy, Matl. Sci. in Semiconductor
Processing, 4 (2001)89-91
2000
P. Petrik, T. Lohner, M. Fried, L.P. Biró, N.Q. Khanh, J.
Gyulai, W. Lehnert, C. Schneider, H. Ryssel: Ellipsometric study of
polycrystalline silicon films prepared by low pressure chemical vapor
deposition, J. Appl. Phys. 87(2000)1743
T. Lohner, M. Fried, P. Petrik, O. Polgár, J. Gyulai and W.
Lehnert: Ellipsometric characterization of oxidized porous silicon
layer structures, Materials Science and Eng. B69-70(2000)182
N.Q. Khánh, Z. Zolnai, T. Lohner, L. Tóth, L.
Dobos and J. Gyulai: He ion beam density effect on damage induced in
SiC during Rutherford backscattering measurement in press, Nucl. Instr.
and Meth. B161/163(2000)424-428
J. Gyulai: The need for materials in the early twothousands, Proc. 2nd
Conf. on Mechanical Engineering, Eds. K. Molnar, Gy. Ziaja, and G.
Vörös, Springer Orvosi Kiadó, Budapest
2000, pp. 2-11.
L.P. Biró, G. Molnár, I. Szabó,
Z.Vértesy, Z.E. Horváth, J. Gyulai, Z.
Kónya, P. Piedigrosso, A. Fonseca, J.B. Nagy, and P.A.
Thiry: Selective nucleation and growth of carbon nanotubes at the
CoSi2/ Si interface, Appl. Phys. Letters, 76(2000)706-708
L.P. Biró, G. Molnár, I. Szabó, Z.
Vértesy, Z.E. Horváth, J. Gyulai, Z.
Kónya, P. Piedigrosso, A. Fonseca, J. B. Nagy and P.A.
Thiry: Selective nucleation and Growth of carbon nanotubes at the
CoSi/Si Interface, Appl. Phys. Lett. 76(2000)706-708
V. Raineri S. Coffa, E. Szilágyi, J. Gyulai, E. Rimini:
He-vacancy interaction for He bubble formation in silicon, Phys. Rev.
B61(2000)937
G. I. Mark, L.P. Biro, J. Gyulai, P.A. Thiry, A.A. Lucas, and P Lambin:
Simulation of scanning tunneling spectroscopy of supported carbon
nanotubes, Phys. Rev. B 62, 2797-2805 (2000)
P. Nagy, R. Ehlich, L.P. Biró, and J. Gyulai: Y-branching of
single walled nanotubes, Appl. Phys. A 70(2000)481-483
J. Gyulai, K.S. Jones, and P. Petrik: Radiation Damage and Annealing in
Silicon, in Ion Implantation Science and Technology, Ed. J.F. Ziegler
(Ion Implantation Technology Co., Edgewater, USA, 2000) pp. 239-268.
K.S. Jones and J. Gyulai: Annealing of Implantation Damage in Silicon,
in Ion Implantation Science and Technology, Ed. J.F. Ziegler (Ion
Implantation Technology Co., Edgewater, USA, 2000) pp. 269-302.
P. Petrik, W. Lehnert, C. Schneider, M. Fried, T. Lohner, J. Gyulai, H.
Ryssel: In situ spectroscopic ellipsometry for the characterization of
polysilicon formation inside a vertical furnace, E-MRS 1999, Spring
Meeting, Symposium P, Thin Solid Films 359 (2000) 1-6
1999
P. Petrik, T. Lohner, M. Fried, N.Q. Khánh, O.
Polgár, J. Gyulai, Comparative study of ion implantation
caused damage depth profiles in polycrystalline and single crystalline
silicon studied by spectroscopic ellipsometry and Rutherford
backscattering spectrometry, Nucl. Instr. Meth. B 147(1999)84-89
Z.E. Horváth, G. Pető, Z. Pászti, É.
Zsoldos, E. Szilágyi, G. Battistig, T. Lohner, G.L.
Molnár, J. Gyulai, Enhancement of oxidation resistance in Cu
and Cu(Al) thin layers, Nucl. Instr. Meth. B 148(1999)868-871
L.P. Biró, B. Szabó, G.I. Márk, J.
Gyulai, K. Havancsák, J. Kürti, A. Dunlop, L. Frey,
H. Ryssel, Carbon nanotubes produced by high energy (E > 100
MeV), heavy ion irradiation of graphite, Nucl.Instr. Meth. B
148(1999)1102-1105
T. Mohácsy, N.Q.Khanh, M. Ádám, and J.
Gyulai: Modified C-t technique for determining the generation lifetime
profile in MeV He+ implanted silicon, Vacuum 50(1999)399
N.Q.Khanh, Cs. Kovácsics, T. Mohácsy, M.
Ádám, and J. Gyulai: Measuring generation
lifetime profile modified by MeV H+ ion implantation in silicon, Nucl.
Instr. Meth. B147(1999)111
L.P. Biró, G.I. Márk, J. Gyulai, K.
Havancsák, S. Lipp, Ch. Lehrer, L. Frey, and H. Ryssel: AFM
and STM investigation of carbon nanotubes produced by high energy ion
irradiation of graphite. Nucl. Instr. Meth. B147(1999)142
P. Petrik, L.P. Biró, M. Fried, T. Lohner, R. Berger, C.
Schneider, J. Gyulai, and H. Ryssel: Comparative study of surface
roughness measured on polysilicon using spectroscopic ellipsometry and
atomic force microscopy, Thin Solid Films 315(1999)186
L.P. Biró, J. Gyulai, G.I. Márk, and Cs.S.
Daróczi, Defects caused by high-energy ion beams as measured
by scanning probe methods, Micron 30(1999)245
[247] L.P. Biró, G.I. Márk, J. Gyulai, N.
Rozlosnik, J. Kürti, B. Szabó, L. Frey, H. Ryssel:
Scanning probe method investigation of carbon nanotubes produced by
high energy ion irradiation of graphite, Carbon 37(1999)739
1998
P. Petrik, M. Fried, T. Lohner, R. Berger, L.P. Biró, C.
Schneider, J. Gyulai and H. Ryssel: Comparative study of
polysilicon-on-oxide using spectroscopic ellipsometry, atomic force
microscopy, and transmission electron microscopy, Thin Solid Films,
313/314(1998)260
L.P. Biró, G. Gyulai and K. Havancsák: Scanning
probe microscopy investigation of nanometer structures produced by
irradiation with 200 MeV ions, 1998 Elsevier Science Ltd, Vacuum
50(1998)263-272.
L.P. Bíró, J. Gyulai, Ph. Lambin, J.B. Nagy, S.
Lazarescu, G.I. Mark, A. Fonseca, P.R. Surján, Zs. Szerekes,
P.A. Thiry and A.A. Lucas:Scanning tunnelling microscopy (STM) imaging
of carbon nanotubes. 1998. Elsevier Science Ltd., Carbon 36(1998)689-696
M. Fried, T. Lohner, J. Gyulai: Ellipsometric Analysis (Chapter l), in
Semiconductors and Semimetals, Eds. R.K. Willardson and E.R. Weber,
Vol., 46., Effect of Disorder and Defects in Ion-Implanted
Semiconductors: Electrical and Physicochemical Characterization, Eds.
G. Ghibaudo and C. Christofides, Acad. Press, San Diego, 1997. p. 1-37.
P. Petrik, O. Polgár, T. Lohner, M. Fried, N.Q.
Khánh, and J. Gyulai: Ion implantation-caused damage depth
profiles in single-crystalline silicon studied by Spectroscopic
Ellipsometry and Rutherford Backscattering Spectrometry, Vacuum
50(1998)293-297,
T. Lohner, N.Q. Khánh, P. Petrik, L.P. Biró, M.
Fried, I. Pintér, W. Lehnert, L. Frey, H. Ryssel, D.J.
Wentink and J. Gyulai: Surface disorder production during plasma
immersion implantation, Thin Solid Films, 313/314(1998)254-258.
Géza I. Mark, L.P. Biro, and J. Gyulai: Simulation of STM
images of three-dimensional surfaces and comparasion with experimental
data: Carbon nanotubes, Physical Review B,
58(1998)12645
T. Lohner, P. Petrik, O. Polgár, N.Q. Khánh, M.
Fried, and J. Gyulai: Ion implantation induced buried disorder studied
by Rutherford Backscattering Spectrometry and Spectroscopic
Ellipsometry, 1998 Elsevier Science Ltd, Vacuum 50(1998)487-490
Géza I. Márk, László P.
Bíró, and József Gyulai: Simulation of
STM images of three-dimensional surfaces and comparison with
experimental data: Carbon nanotubes, Physical Review B,
58(1998)12645-12648
1997
L.P. Biró, J. Gyulai, K. Havancsák: Comparison of
damage produced by 209 MeV Kr irradiation in muscovite mica, graphite
and silicon. Nucl. Instr.and Meth. B 122 (1997) 476-480
L.P. Biró, J. Gyulai, K. Havancsák, A.Yu. Didyk,
S. Bogen, L. Frey, H. Ryssel: New method based on atomic force
microscopy for in-depth characterization of damage in Si irradiated
with 209 MeV Kr, Nucl. Instr. and Meth. B 122 (1997) 559-562
N.Q. Khánh, P. Tüttő, O. Buiu, E.N.
Jároli, L.P. Biró, A. Manuaba, J. Gyulai: Charge
carrier lifetime modification in silicon by high energy H+ or He+ ion
implantation, Nucl. Instr. and Meth. B 127/128 (1997) 388-392
K. Havancsák, L.P. Biró, J. Gyulai and A. Yu.
Didyk: STM and AFM observations of damage produced by swift Ne and Kr
ions in graphite, 18th International conference on Nuclear Tracks in
Solids, Cairo, Egypt, 1-5 September 1996, Radiation Measurement
28(1997)65
L.P. Biró, J. Gyulai, K. Havancsák, A. Yu. Didyk,
L. Frey, and H. Ryssel: In-depth damage distribution characterization
by scanning probe methods in targets irradiated with 200 MeV ions, 10th
International Conference on Ion Beam Modification of Materials, IBMM
'96, Sept. 1-6. 1996, Albuquerque, New Mexico, USA , Nucl. Instr. and
Meth., B 127/128 (1997) 32-37
L.P. Biró, J. Gyulai, and K. Havancsák: In-depth
characterization of damage produced by swift heavy ion irradiation
using a tapping mode atomic force microscope, Int. Symp. on Materials
Sci, Applications of Ion Beam Techniques, September 9-12. 1996,
Seeheim, Germany, Materials Science Forum 248-249(1997)129
N.Q. Khánh, P. Tüttő, E.N. Jároli, O.
Buiu, L.P. Biró, F. Pászti, T.
Mohácsy, C. Kovasics, A. Manuaba, and J. Gyulai: Charge
carrier lifetime modification in silicon by high energy H+, He+ ion
implantation, Materials Sci. Forum 248/249 (1997)
K.Havancsák, L.P.Biró, J.Gyulai and
Z.Illés: STM and AFM investigations of surface structures
following swift heavy ion irradiation, Workshop on defect production,
accumulation and materials performance in irradiation environment, 2-8.
October, 1996. Davos, Switzerland, J. Nucl. Materials, 251(1997)139-144
1996
L.P. Bíró, J. Gyulai, N.Q. Khánh and
P. Tüttő: Influence of sample thiskness on carrier lifetime
modification induced by 4 MeV proton implantation in silicon. Nucl.
Instr. and Meth. B 112 (1996) 173-176
L.P. Biró, J. Gyulai, K. Havancsák: Atomic scale
investigation of surface modification induced by 215 MeV Ne irradiation
on graphite, Nucl. Instr. and Meth. B 112 (1996) 270-274
N.Q. Khánh, I. Pintér, Cs. Dücső, M.
Ádám, E. Szilágyi, I.
Bársony, M.A. El-Sherbiny, J. Gyulai: Ion beam analysis of
plasma immersion implanted silicon for solar cell fabrication, Nucl.
Instr.and Meth. B 112(1996) 259-262
L.P. Biró and J. Gyulai, K. Havancsák, A.Yu.
Didyk, S.Bogen and L.Frey: Use of atomic-force microscopy and of a
parallel irradiation geometry for in-depth characterization of damage
produced by swift Kr ions in silicon. Phys. Rev.B, 54(1996)11853-11856
T. Lohner, M.A. El-Sherbiny, N.Q. Khánh, M. Fried, H.
Wormeester and J. Gyulai: Anomalous surface damage production during
high energy implantation analyzed by ellipsometry and RBS. Ion Beam
Modification of Materials , J.S. Williams, R.G. Elliman, M.C. Ridgway
(eds.) 1996. Elsevier Science B.V. 797-801
E. Kótai, N.Q.Khánh and J. Gyulai: Crystal
defects production in silicon by molecular beam implantation, in Ion
Beam Modification of Materials , J.S. Williams, R.G. Elliman, M.C.
Ridgway (eds.) 1996. Elsevier Science B.V. 823-827
J. Gyulai and K.S. Jones: Radiation Damage and Annealing in Silicon
after Ion Implantation, in "Ion Implantation Science and Technology"
ed. J.F. Ziegler (Ion Implantation Technology Co., Yorktown NY, 1996)
pp. 229-260.
K.S. Jones and J. Gyulai: Annealing of Implantation Damage in Silicon,
in "Ion Implantation Science and Technology" ed. J.F. Ziegler (Ion
Implantation Technology Co., Yorktown NY, 1996) pp. 261-292
M.A. El-Sherbiny, N.Q. Khánh, H. Wormeester, M. Fried, T.
Lohner, I. Pintér, J. Gyulai: Surface disorder production
during plasma immersion implantation and high energy ion implantation.
Nucl. Instr.and Meth. B 118(1996)728-732
J. Gyulai, T. Lohner, M. Fried, N.Q. Khanh, Gen Qing Yang and Z. Toth:
Damage production and self-annealing during molecular implantation
analyzed by RBS and ellipsometry. Radiation Effects and Defects in
Solids, 1996. Vol. 140, pp.49-61.
L. Csepregi, J. Gyulai, S.S. Lau: The early history of solid phase
epitaxial growth. Materials Chemistry and Physics 46(1996)178-180.
1995
N.Q.Khánh, A. Hámori, M. Fried, Cs.
Dücső, and J. Gyulai: Nondestructive Detection of Microvoids
at the Interface of Direct Bonded Silicon Wafers By Scanning Infrared
Microscopy, J. Electrohem Soc. 142(1995)2425
L.P.Biró and J. Gyulai, K. Havancsák:
Scanning-tunneling-microscope investigation of a 215-MeV Ne-irradiated
graphite surface, Physical Review B , 52 (1995)2047-2053.
J. Gyulai, F. Pászti, E. Szilágyi:Considerations
on effect of local temperature on primary defect production. Nucl.
Instr. and Meth. B 106 (1995) 328-332.
1994
L.P. Biro, J. Gyulai, S. Bogen, L. Frey, H. Ryssel: Investigation of
the effect of altered defect structure produced by photon assisted
implantation on the diffusion of As in silicon during thermal
annealing. Nucl. Instr. Meth. B85(1994)925-928
J. Gyulai, H. Ryssel, L.P. Biró, L. Frey, A. Kuki, T.
Kormány, G. Serfőző, and N.Q. Khanh: Athermal effects in ion
implanted layers. Rad. Eff. and Defects in Solids 127(1994)265
T.Lohner, Z. Tóth, M. Fried, N.Q. Khánh, Gen Qing
Yang, Lin Chen Lu, Shichang Zou, L.J. Hanekamp, A. van Silfhout, J.
Gyulai: Comparative investigation of damage induced by diatomic and
monoatomic ion implantation in silicon. Nucl.Instr. and Meth..B85(1994)
524-527
I. Kasko, C. Dehm, J. Gyulai and H. Ryssel: Ion-beam mixing of Co-Si
and Co-SiO2: A comparison between Monte Carlo simulations and
experiments. Rad. Eff. and Defects in Solids, 130-131(1994)345-352.
1993
Lin Cheng-Lu, Yang Gen-Qing, Fang Zi-Wei, Li Xiao-Qin, Zou Shi-Chang,
J. Gyulai and R.G. Elliman: Damage Enhancement Effect in Silicon
Implanted With Molecular Ions, Science in China (Series A) Vol, 36 No.
2, 235-243, February 1993.
T. Lohner, M. Fried and J. Gyulai: Ion-implantation-caused special
damage profiles determined by spectroscopic ellipsometry in crystalline
and in relaxed (annealed) amorphous silicon. Thin Solid Films, 233
(1993) 117-121.
R. Wiget, E.P. Burte, J. Gyulai, H. Ryssel: Silicon to silicon direct
bonding - characterization of the interface and manufacture of p-i-n
diodes. 5th Eur. Conf on Power Electronics Brighton 14-17.9.1993.
C. Dehm, I. Kasko, E.P. Burte, J. Gyulai and H. Ryssel: Influence of
oxide thickness on ion-beam induced and thermal CoSi2 formation. Appl.
Surf. Sci. 73(1993)268-276
L.P. Biró, J. Gyulai, H. Ryssel, L. Frey, T. Kormany, N.M.
Tuan, and Z.E. Horvath: Photon Assisted implantation (PAI), Nucl.
Instr. Meth., B80/81 (1993) 607-611.
L.P.Biró, J. Gyulai, M.Lucassen, L.Gong, L.Frey and
H.Ryssel: Photon Assisted Implantation of B and As in Si, International
Union of Materials Science - 3 International Conference on Advanced
Materials /Sympo: Materials Syntesis and Modification by Ion Beams
and/or Laser Beams, Tokyo, 1993.08.31-09.04., Japan
E. Jaroli, J. Gyulai, B. Pécz, R. Veresegyházy,
G. Radnóczy, and P.B. Barna: The effect of defects caused by
Xe ion bombardment on the structure of Au/GaAs contacts, Nucl. Instr.
Meth., B80/81(1993)548-551.
Z. E. Horvath, G. Petö, E. Zsoldos, and J. Gyulai: Strain
distribution in As+ and Sb+ ion implanted and annealed
<100> Si, Nucl. Instr. Meth. B80/81(1993)552-555.
1992
H. Zimmermann, N.Q. Khanh, G. Battistig, J. Gyulai, H.Ryssel: Pairing
of noble metals with phosphorus, Appl. Phys. Lett. 60 (1992) 748.
C. Dehm, J. Gyulai, and H. Ryssel: Shallow titanium-silicided p+n
junction formation by triple germanium amorphization, Appl. Phys. Lett.
60 (1992) 1214.
L. Frey, S. Bogen, L. Gong, W. Jung, H. Ryssel, and J. Gyulai: High
energy ion implantation for semiconductor application at
Fraunhofer-AIS, Erlangen, Nucl. Instr. Meth. B62 (1992) 410.
B. Pecz, G. Radnoczy, Zs.J. Horvath, P.B. Barna, E. Jaroli, J. Gyulai:
The effect of ion beam treatment and subsequent annealing on Au/GaAs
contacts, J. Appl. Phys., 71 (1992) 3408.
G. Amsel, F. Paszti, E.Szilagyi, J. Gyulai: p,d and a particle
discrimination in NRA: thin, adjustable sensitive zone semiconductor
detectors revisited, Nucl. Instr. Meth B63 (1992)421
G. Molnar, G. Petö, E. Kotai, J. Gyulai, L. Guczi: Oxidation
of Gd thin films on Si structure via grain boundaries, Surface and
Interface Anal. 19 (1992) 469
J. Gyulai: Radiation damage and annealing in ion implantation, in
Handbook of Ion Implantation Technology, J.F. Ziegler, ed. (Elsevier,
Amsterdam, 1992) p. 69
M. Fried, T. Lohner, E. Jaroli, N.Q. Khanh, C. Hajdu, J. Gyulai:
Non-destructive determination of damge depth profiles in ion implanted
semiconductors by Multiple-Angle-of-Incidence single-wavelength
ellipsometry using different optical models, J. Appl. Phys., 72 (1992)
2197
L. Antos, J. Gyulai, N.Q. Khanh, L. Frey: End-Of-Range disorder
influenced by inherent oxigen in silicon, Nucl. Instr. Meth., B71
(1992) 399-405
R. Öchsner, A. Kluge, J. Gyulai, S. Bogen, and H. Ryssel:
Reduction of friction and wear by ion-implanted carbonized photoresist,
Surface and Coatings Technology, 51 (1992) 124-128
C. Dehm, E.P. Burte, J. Gyulai, and H. Zimmermann: The influence of ion
beam mixed TiSi2 layers on reverse characteristics of diodes, J. Appl.
Phys. 71 (1992) 4365-4369
B. Pecz, G. Radnoczy, Zs.J. Horvath, P.B. Barna, E. Jaroli, and J.
Gyulai: The effect of Xe beam treatment on the interaction between gold
and GaAs, MRS. Symp. Proc. 260 (1992) 293-297.
N.Q. Khanh, M. Fried, A. Toth, J. Gyulai, B.Pecz, Ion mixing enhanced
wafer bonding for Silicon-On-Insulator structures, J. Appl. Phys., 72
(1992) 5602.
1991
G. Molnar, I.Geröcs, G.Peto, E.Zsoldos, J.Gyulai, E.Bugiel:
Epitaxy of GdSi1.7 on <111>Si by solid phase reaction,
Appl. Phys. Lett. 58, 249 (1991)
E.Lorenz, L.Frey, J.Gyulai, H.Ryssel, N.Q.Khanh: Effect of oxygen on
the formation of End-of-Range disorder in implantation amorphized
silicon, J. Mat. Res. 6, 1695 (1991)
C.Dehm, J.Gyulai, H.Ryssel: Formation and Contact Properties of
Ti-Silicided Shallow Junctions, Appl. Surf. Sci. 53, 313 (1991)
M. Fried, T. Lohner, E. Jaroli, C. Hajdu, J. Gyulai: Non-destructive
analysis of damage depth profiles inion-implanted semiconductors by
Multiple-Angle-of-Incidence single-wavelength ellipsometry, Nucl.
Instr. Meth. B55, 257 (1991)
T. Lohner, W. Skorupa, M. Fried, K. Vedam, N.Nguyene, R.
Grötzschel, H. Bartsch, J. Gyulai: Comparative study of the
effect of annealing of nitrogen-implanted silicon-on-insulator
structures by spectroscopic ellipsometry, cross-sectional transmission
electron microscopy and Rutherford backscattering spectroscopy, Mater.
Sci. and Eng. B12 (1991) 177.
Early papers
[1] J.I. Horvath, J. Gyulai: Über die Erhaltungssätze
des elektromagnetischen Feldes in bewegten Dielektriken, Acta Phys. et
Chem. Szeged, 2 39-48 (1956)
[2] J.I. Horvath, J. Gyulai: Ergänzung zu unserer Arbeit
"Über die Erhaltungssätze des elektromagnetischen
Feldes in bewegten Dielektriken ", Acta Phys. et Chem. Szeged, 3, 33-34
(1957)
[3] L. Gombay, J. Gyulai, J. Lang: Über die Bestimmung der
Konzentration und der Ladungsträger in gemischten Halbleitern,
Acta Phys. Hung. 8, 203-209 (1957)
[4] L. Gombay, J. Gyulai, I. Hevesi: Herstellung von gepressten
Photoelementen aus CdS-Pulver, Acta Phys. et Chem. Szeged, 4, 30-34
(1958)
[5] J. Gyulai: Determination of some properties of silicon and
germanium crystals (Ph.D. Thesis, Univ. of Szeged, 1960, Hungary, in
Hungarian)
[6] J. Gyulai: On the simultaneous determination of lifetime and
surface recombination velocity of injected carriers in semiconductors
by the Flying Spot Method, Acta Phys. Hung., 12, 167-170 (1960)
[7] J. Gyulai, J. Láng: Measurement of diffusivity, lifetime
and surface recombination velocity in semiconductors by the Flying Spot
Method, Acta Phys. et Chem Szeged, 6, 23-32 (1960)
[8] L. Gombay, J. Gyulai, J. Kispéter, J. Láng:
Über die elektrischen Eigenschaften von bromierten Selen mit
Tallium-Zusatz, Acta Phys. et Chem. Szeged, 8, 30-45 (1962)
[9] V.K. Subashiev, J. Gyulai, G.A. Chalikyan: Eksitonnoe pogloshenie i
fotoprovodimost v fosfide gallija, Proc. Conf. on photoconductivity,
Odessa, 1965, p. 96, in Russian
[10] J. Gyulai, V.K. Subashiev, G.A. Chalikyan: On the mechanism of
photoconductivity in high-resistivity GaP, phys. stat. sol., 17, K49-51
(1966)
[11] J. Gyulai, V.K. Subashiev, G.A. Chalikyan: Anomalous
photoconductivity of GaP crystals, Acta Phys. et Chem. Szeged, 13,
25-37 (1967)
[12] J. Gyulai,E. Rauscher, L. Michailovits: Surface recombination
measurements of Ge Electrolyte interfaces, Symp. on Test Methods and
Meas. of Semicond. Devices,Budapest, 1967, p. 506/1-7
[13] J. Gyulai, L. Michailovits, Eve Rauscher: Improved Flying Spot
Method for determination of surface recombination velocity in
semiconductors, Acta Phys. et Chem. Szeged 3, 99-102 (1967)
[14] J. Gyulai: Induced impurity breakdown oscillations and observation
of traps lying higher than the indirect band edge in GaP, phys. stat.
sol., 29, K85-88 (1968)
[15] L. Michailovits, J. Gyulai, J. Jarai: Surface recombination
velocity measurements on surfaces of n-type germanium subjected to
various gas cycles, Acta Phys. et Chem. Szeged, 15, 95-98 (1969)
[16] A. Süli, I, Hevesi, J. Gyulai: Field effect relaxation of
contact potential difference between stabilized vanadium pentoxide
crystal and platinum surface, Acta Phys. et Chem. Szeged, 15, 99-102
(1969)
[17] J. Gyulai, J. Jarai: Electric and photoelectric investigations on
GaP single crystals, Acta Phys. et Chem., 16, 21 (1967)
[18] J. Gyulai: Photoelectric investigations on GaP and GaAs-GaP solid
solutions (Thesis for "Candidate in Physics", 1969, Budapest, in
Hungarian)
[19] J. Gyulai, O. Meyer, J.W. Mayer: Analysis of oxide layers on
silicon and enhanced oxide growth on implanted silicon samples, Bull.
Amer. Phys. Soc., Ser. II., 1160 (1970)
[20] J. Gyulai, O. Meyer, J.W. Mayer, V. Rodriguez: Analysis of silicon
nitride layers on silicon by backscattering and channeling effect
mea-surements, Appl. Phys. Lett., 16, 232 (1970)
[21] O. Meyer, J. Gyulai, J.W. Mayer: Analysis of amorphous layers on
silicon by backscattering and channeling effect measurements, Surf.
Sci., 22, 248 (1970)
[22] J. Gyulai: Energy distribution of traps in GaP crystals, Acta
Phys. Hung., 29, 75 (1970)
[23] J. Gyulai: Composition of silicon dioxide and silicon nitride
layers, Acta Phys. et Chem. Szeged, 16, 119 (1970)
[24] J. Gyulai, J.W. Mayer, I. Mitchell, V. Rodriguez: Outdiffusion
through silicon oxide and silicon nitride layers on gallium arsenide,
Appl. Phys. Lett., 17, 332 (1970)
[25] I. Hevesi, A. Süli, J. Gyulai: Contact potential
difference measurements on (010) surface of vanadium pentoxide, Acta
Phys. Hung., 29, 79-83 (1970)
[26] J. Gyulai, I. Mitchell, V. Rodriguez, J.W. Mayer: Analysis of thin
surface films and impurity profiles by backscattering and channeling of
MeV helium ions, Proc. Conf. Phys. Chem. of Semiconductor
Heterojunction and Layer Structures, Budapest, 1970, p. V-293
[27] J. Gyulai, O. Meyer, J.W. Mayer, V. Rodriguez: Evaluation of
silicon nitride layers of various composition by backscattering and
channeling effect measurements, J. Appl. Phys., 42, 451 (1971)
[28] J. Gyulai, O. Meyer, R.D. Pashley, J.W. Mayer: Lattice location
and dopant behavior of group II and VI elements implanted silicon, Rad.
Effects, 7, 17 (1971)
[29] J. Gyulai, N.G.E. Johansson, J.W. Mayer, O. Meyer et al.: Ion
implantation and backscattering and channeling effect measurements for
analysis of semiconductor structure, AFCRL-71-0087,Bedford MA (1971)
[30] J. Gyulai, J.W. Mayer, V. Rodriguez, H.J. Gopen, A.Y.C. Yu:
Alloying behavior of Au and Au-Ge on GaAs, J. Appl. Phys., 42, 3578
(1971)
[31] J. Gyulai, E. Pasztor, P. Keresztes, L. Csepregi, V.V. Titov:
Vliyanie predvaritelnoy bombardirovki na svojstva kremniya pri ionnom
legirovanii, ZfK-236 DAdW, ZfK Rossendorf, 1972, p.191
[32] J. Gyulai: Ion implantation in semiconductors, Proc. Int. Conf.
Ion Implantation in semiconductors, Lublin, 1974, Vol.2, p. 563
[33] J. Suski, L. Csepregi, J. Gyulai, H. Rzewuski, Z. Werner: The
effect of high energy electron irradiation on the annealing properties
of boron and phosphorus implanted silicon layers, Proc. Int. Conf. Ion
Implantation in semiconductors, Lublin, 1974, Vol. 1, p. 270
[34] P. Keresztes, T. Mohacsy, A. Hegedüs, J. Gyulai:
Elektricheskie svojstva ionno-vnedrennükh p-n i n-p
perekhodov, Proc. Int. Conf. Ion Implantation in semiconductors, Poland
Lublin, 9-12. Sept. 1974, Vol.2, p.517 (in Poland)
[35] Vera Schiller, P. Keresztes, T. Mohacsy, J. Gyulai:
Proborü na ionno-vnedrennüh MOP-tranzistorah, Proc.
Int. Conf. Ion Implantation in semiconductors, Lublin, 1974, Vol.2, p.
508 (in Russian)
[36] P. Revesz, A.A: Kukharskij, J. Gyulai: Issledovanie svojstv
ionno-vnedrennükh sloev kremniya metodami infrakrasnoj
spektroskopii, Proc. Int. Conf. Ion Implantation in semiconductors,
Lublin, 1974, Vol.2, p. 344 (in Russian)
[37] T. Nagy, G. Mezey, E. Kotai, J. Gyulai: Issledovanie narushenij
reshetki i polozhenie vnedrennükh atomov As, Sb i Ga v
kristallicheskoj reshetke kremniya v zavisimosti ot
temperaturü otzhiga i plotnosti toka vnedrennükh
ionov, Proc. Int. Conf. Ion Implantation in semiconductors, Lublin,
1974, Vol.1, p. 73 (in Russian)
[38] J. Gyulai, L. Csepregi, T. Nagy, J.W. Mayer, H. Müller:
Drive-in diffusion studies on antimony and gallium implanted into
silicon, Le vide et le couche mince, No. 184, 416 (1974)
[39] J. Gyulai, P. Revesz, L. Zsoldos, G. Vertesy, J. Gyimesi: Defects
and amorphization in ion-implanted silicon, Acta Phys. et Chem. Szeged,
20, 259 (1974)
[40] Ya. Bogancs, S. Deme, J. Gyulai, A. Nagy, V.M. Nazarov, A.
Csöke, Yu.S. Yazvitskij: Ispolzovanie reaktsii 10B(n,a )7Li
dla opredeleniya probega ionov implantirovannükh v kremnii,
OIYaI 014-8295, 1974 (in Russian)
[41] H. Müller, J. Gyulai, J. W. Mayer, F.H. Eisen, B. Welch:
Anodic oxidation and profile determination of ion implanted
semi-insulating GaAs, Implantation in Semiconductors (Ed. S. Namba),
Plenum, NY, 1975, p. 19
[42] H. Müller, J. Gyulai, W.K. Chu, J.W. Mayer, T.W. Sigmon:
Influence of an oxidizing ambient on the distribution of As, Sb and Ga
implanted into silicon, J. Electrochem. Soc., 122, 1234 (1975)
[43] A. Balázs, L. Hermann, J. Gyulai: Determination of
junction depth in implanted silicon by "pulled" anodization and
capacitance-voltage measurements, phys. stat. sol. (a) 29, K105 (1975)
[44] J.W. Mayer, L. Csepregi, J. Gyulai, T. Nagy, G. Mezey, P. Revesz,
E. Kotai: MeV He backscattering analysis of ion implanted Si drive-in
diffusion and epitaxial regrowth, Thin Solid Films 32, 303 (1976)
[45] H. Müller, W.K. Chu, J. Gyulai, J.W. Mayer, T.W. Sigmon,
T.R.Cass: Crystal orientation dependence of residual disorder in As
implanted Si, Appl. Phys. Lett. 26, 292 (1975)
[46] M. Vértesy, L. Csepregi, J. Gyulai: Application of ion
implantation process to fabricate microwave diodes, Annual of Res.
Inst. for Telecommunication (Ed. I. Váradi), Budapest, 1975,
p.215
[47] J. Suski, J. Gyulai, J.J. Loferski, H. Rzewuski: Ionization
enhanced annealing in phosphorus implanted silicon, Proc. Int. Conf.
Ion Implantation in Semiconductors (Ed. J. Gyulai) Budapest, 1975, p.
290
[48] G. Mezey, J. Gyulai, T. Nagy, E. Kotai, A. Manuaba: Enhanced
sensitivity of oxygen detection by the 3.05 MeV (a ,a ) elastic
scattering, Proc. Int. Conf. IOn Beam Analysis (Eds. O. Meyer, F.
Käppeler, G. Linker), Elsevier, 1975, p.303
[49] Ya. Bogancs, J. Gyulai, A. Nagy, V.M. Nazarov, Z. Seres, Yu.S.
Yazvitskij: Ispolzovanie reaktsii 10B(n,a ) dla opredeleniya
raspredeleniya atomov bora v kremnii, Isotopenpraxis 11, 429 (1975, in
Russian)
[50] T. Nagy, G. Mezey, E. Kotai, J. Gyulai, P. Revesz: Lattice
location and electrical behavior of group III and V elements implanted
into silicon, KFKI-76-24, Budapest, 1976
[51] G. Mezey, T. Nagy, J. Gyulai, E. Kotai, T. Lohner, A. Manuaba:
Surface passivation of silicon by implantation, Proc. Conf. Physics of
Ion-ized Gases, Dubrovnik, 1976, p. 224
[52] G. Mezey, T. Nagy, J. Gyulai, E. Kotai, A. Manuaba, T. Lohner,
J.W. Mayer: Enhanced and inhibited oxidation of implanted silicon, in
Ion Implantation in Semiconductors (Ed. F. Chernow), Plenum, NY, 1976,
p. 49
[53] J. Suski, L. Csepregi, J. Gyulai, H. Rzewuski, Z. Werner: Electron
irradiation assisted annealing of boron and phosphorus implanted
silicon layers, Rad. effects 29, 137-141 (1976)
[54] J. Suski, J. Krynicki, H. Rzewuski, J. Gyulai: Ionization enhanced
annealing of P and As implanted Si layers, Rad. effects 30, 125-126
(1976)
[55] I.P. Akimchenko, V.V. Krasnopevtsev, Yu.V. Milyutin, V.S. Vavilov,
J. Gyulai, G. Mezey, T. Nagy: He backscattering and infrared absorption
studies of natural diamond containing (a) High concentration of
implanted silicon, INt. Conf. Rad. effects on Solids, Dubrovnik, 1976,
Inst. of Physics Conf. Series, No 31 (1977) p. 354
[56] A.Z. Nagy, J. Bogancs, J. Gyulai, A. Csöke, V. Nazarov,
Z. Seres, A. Szabo, Yu.S. Yazvitskij: Determination of boron range
distribution in ion-implanted silicon by the 10B(a ,a )7Li reaction, J.
Radioanal. Chem. 38, 19-27 (1977)
[57] G. Mezey, M. Somogyi, C.A. Evans, T. NAgy, J. Gyulai: Native oxide
studies on the surface of semiconductors, Proc. 7th Int. Vac. Congress,
Vienna, 1977, p. 751-574.
[58] G. Mezey, T. Nagy, J. Gyulai, E. Kotai, T. Lohner, M. Somogyi:
Substoichiometric native oxide layers on GaP studied by 4He+
backscattering, Thin Solid Films 43, L23-L26 (1977)
[59] Ya. Bogancs, J. Gyulai, A. Nagy, V.M. Nazarov, Z. Seres, A. Szabo:
Ispolzovanie reaktsii 10B(n,a )7Li dla opredeleniya raspledeleniya
atomov bora v kremnii, OIYaI P3-10777 (1977, in Russian)
[60] W.F. Tseng, J. Gyulai, S.S. Lau, J. Roth, T. Koji, J.W. Mayer:
Investigation of interfacial dislocations by backscattering
spectrometry and transmission electron microscopy, Nucl. Instr. Meth.
149, 615 (1978)
[61] V.P. Kolonits, E. Kotai, Gy. Hárs, J. Gyulai: The
investigation of the oxidation of tantalum nitride layers by RBS and
AES method and by measuring the resistance, respectively, Proc. 8th
Int. Vacuum Congress, Suppl. Le Vide et les Couches Minces No. 201, p.
677, 1978
[62] J. Gyulai: Ion implantation, in Selected Topics of Research of
Solid State in Hungary (Eds. T. Siklós et al.) Akad. Publ.,
Budapest, 1977, p. 124-131 (in Hungarian)
[63] G. Mezey, T. Nagy, T. Lohner, E. Kotai, A. Manuaba, J. Gyulai:
Surface layer analysis by Rutherford scattering, Izotoptechnika 20,
358-362 (1977, in Hungarian)
[64] T. Lohner, G. Mezey, E. Kotai, T. Nagy, A. Manuaba, J. Gyulai:
Determination of surface oxygen content by resonant backscattering,
Izotoptechnika 20, 368-372. (1977, in Hungarian )
[65] J. Bogancs, J. Gyulai, A. Nagy, A. Szabó, T. Zanati:
Die Anwendung der Kernreaktion 10B(n,a )7Li zur Lösung
verschiedener technischer und wissenschaftlicher Aufgaben, Radiochem.
Radioanal. Lett. 32, 71 (1978)
[66] G. Mezey, E. Kotai, J. Gyulai, T. Lohner, t. Nagy, A. Manuaba: A
methodical innovation to improve the depth resolution of channeling
measurements, Proc. Int. Conf. Ion Implantation in Semiconductors,
Reinhardsbrunn, GDR, ZfK-360, 1978, p. 433
[67] J. Gyulai: Review how Rutherford backscattering helped solid state
physics, Proc. Int. Conf. Ion Implantation in Semiconductors,
Reinhardsbrunn, GDR, ZfK-360, 1978, p. 423
[68] G. Mezey, E. Kotai, T. Lohner, T. Nagy, J. Gyulai, A. Manuaba:
Improved depth resolution of channeling measurements in Rutherford
backscattering by a detector tilt, Nucl. Instr. Meth. 149, 235 (1978)
[69] J. Bogancs, J. Gyulai, A. Nagy, V.M. Nazarov, A. Szabó,
Z. Seres: Utilization of thermal neutron beams to investigate
distributions of boron atoms in materials, Joint Inst. Nucl. Res.,
Dubna, P3-11816, 1978
[70] E. Kotai, T. Nagy, O. Meyer, J. Gyulai, P. Revesz, G. Mezey, T.
Lohner, A. Manuaba: Diffusion measurement of implanted Sb into Si using
SiO2 encapsulation, Proc. IBMM'78 (Eds. J. Gyulai, T. Lohner, E.
Pasztor), KFKI Publ. Budapest, 1978, p. 573; Rad. Effects 47, 27 (1980)
[71] P. Revesz, Gy. Farkas, J. Gyulai: Behavior of antimony above solid
solubility in silicon produced by implantation and laser annealing,
Proc. IBMM'78 (Eds. J. Gyulai, T. Lohner, E. Pasztor), KFKI Publ.
Budapest, 1978, p. 271; Rad. Effects 47, 149 (1980)
[72] P. Revesz, Gy. Farkas, G. Mezey, J. Gyulai: Epitaxial regrowth of
evaporated amorphous silicon by pulsed laser beam, Appl. Phys. Lett.
33, 431 (1978)
[73] P. Revesz, Gy. Farkas, J. Gyulai: Behavior of Sb above solid
solubility produced by laser annealing, Proc. Laser Effects on Ion
Implanted Semiconductors, Catania, 1978, p. 182
[74] S.S. Lau, S. Matteson, J.W. Mayer, P. Revesz, J. Gyulai, J. Roth,
T.W. Sigmon: Improvement of crystalline quality of epitaxial Si layers
by ion-implantation, Proc. IBMM'78 (Eds. J. Gyulai, T. Lohner, E.
Pasztor), KFKI Publ. Budapest, 1978, p. 975, Appl. Phys. Lett. 34, 76
(1979)
[75] J. Suski, J. Krynicki, H. Rzewuski, J. Gyulai, J.J. Loferski:
Ionization enhanced annealing in phosphorus implanted silicon, Rad.
effects 35, 13-16 (1978)
[76] J. Gyulai: Application of Rutherford backscattering on implanted
layers and thin films (D. Sc. Thesis, Budapest, 1978)
[77] M. Somogyi, M. Farkas-Jahnke, G. Mezey, J. Gyulai: Investigation
of surface layers produced by chemical treatment of GaP, Thin Solid
Films 60, 377-386 (1979)
[78] J. Gyulai, P. Revesz: Ion implantation induced defects and
epitaxial regrowth by thermal and laser annealing, Inst. Phys. Conf.
Ser. 46(1) 128-147 (1979)
[79] G. Mezey, E. Kotai, T. Nagy, T. Lohner, A. Manuaba, J. Gyulai,
V.R. Deline, C.A. Evans, R.J. Blattner: A comparison of techniques for
depth profiling oxygen in silicon, Nucl. Instr. Meth. 167, 279 (1979)
[80] S. Matteson, P. Revesz, Gy. Farkas, J. Gyulai, T.T. Sheng:
Epitaxial regrowth of Ar implanted Si by laser annealing, J. Appl.
Phys. 51, 2625 (1980)
[81] J. Gyulai: Semiconductor materials and materials science, in
Materials Science and Applications (Eds. T. Siklos et al.) akad. Publ.,
Budapest, 1980, p. 124 (in Hungarian)
[82] E. Kotai, G. Mezey, T. Lohner, A. Manuaba, F. Paszti, J. Gyulai:
Enhanced sensitivity and depth resolution of oxygen detection combining
resonance scattering and tilted target methods, KFKI-1980_66, Budapest,
1980, Nucl. Instr. Meth. 180, 619-623 (1981)
[83] G. Mezey, S.M. Matteson, J. Gyulai: High-dose Ge implantation into
(100) Si, Nucl. Instr. Meth. 182/183, 587-590 (1981)
[84] F. Paszti, G. Mezey, E. Kotai, T. Lohner, A. Manuaba, J. Gyulai,
L. Pocs: Surface impurity loss during MeV 14N+ ion bombardment,
KFKI-1980-65, Budapest, 1980, Nucl. Instr. Meth. 182/183, 283-286 (1981)
[85] T. Lohner, G. Mezey, E. Kotai, F. Paszti, L. Kiralyhidi, G. Valyi,
J. Gyulai: Ellipsometric and channeling studies on ion-implanted
silicon, KFKI-1980-64, Budapest, 1980, Nucl. Instr. Meth. 182/183,
591-594 (1981)
[86] G. Valyi, V. Schiller, J. Gyimesi, J. Gyulai: Analysis of chemical
processes of plasma etching, Thin Solid Films 76, 215-219 (1981)
[87] T. Lohner, G. Valyi, G. Mezey, E. Kotai, J. Gyulai: The role of
surface cleaning in the ellipsometric studies of ion-implanted silicon,
Rad. effects 54, 251-252 (1981)
[88] F. Paszti, L. Pogany, G. Mezey, E. Kotai, A. Manuaba, L. Pocs, J.
Gyulai, T. Lohner: Blistering and exfoliation investigations on gold by
3.52 MeV helium particles, KFKI-1981-22, Budapest, 1981, J. Nucl.
Materials 98, 11 (1981)
[89] J. Gyulai: Recent developments in and by Rutherford backscattering
studies, Acta Phys. Hung. 49, 55-66 (1981)
[90] T. Lohner,G. Mezey, E. Kotai, A. Manuaba, F.Paszti, J. Gyulai:
Damage thickness measurements of ion-implanted Si layers by
ellipsometry and channeling, Proc. Work. Meeting on Ion Implantation in
Semiconductors and other Materials (Ed. M. Setvak), Prague, 1981, p. 125
[91] T. Lohner, G. Mezey, E. Kotai, A. Manuaba, F. Paszti, J. Gyulai:
Measurement of degree of amorphousness by channeling and ellipsometry,
Proc. Work. Meeting on Ion Implantation in Semiconductors and other
Materials (Ed. M. Setvak), Prague, 1981, p. 125
[92] R.M. Bayazitov, R.V. Aganov, I.B. Khaibullin, E.I. Shtyrkov T.
Lohner, E. Kotai, J. Gyulai: Analiz segregatsii primesi pri lazernom
otzhige, Proc. Work. Meeting on Ion Implantation in Semiconductors and
other Materials (Ed. M. Setvak), Prague, 1981, p. 53
[93] A. Manuaba, F. Paszti, L. Pogany, M. Fried, E. Kotai, G. Mezey, T.
Lohner, I. Lovas, L. Pocs, J. Gyulai: Comparative study on
Fe32Ni36Cr14P12B6 metallic glass and its polycrystalline modification
bombarded by 2000 keV helium ions with high fluence, Proc. Int. Conf.
Amorphous Systems Investigated by Nuclear Methods (Eds. Zs. Kajcsos et
al.), Budapest, 1981, p.989, Nucl. Instr. Meth. 199, 409 (1982)
[94] T. Lohner, G. Mezey, E. Kotai, A. Manuaba, F. Paszti, A. Devenyi,
J. Gyulai: An investigation of ion-bombarded silicon by ellipsometry
and channeling effect, Proc. Int. Conf. Amorphous Systems Investigated
by Nuclear Methods (Eds. Zs. Kajcsos et al.), Budapest, 1981, p.979,
Nucl. Instr. Meth. 199, 405 (1982)
[95] I.B. Khaibullin, E. I. Shtyrkov, R. M. Bayazitov, R.A. Aganov, T.
Lohner, G. Mezey, F. Paszti, A. Manuaba, E. Kotai, J. Gyulai:
Segregation of impurities due to pulsed laser beam annealing, Proc.
Int. Conf. Amorphous Systems Investigated by Nuclear Methods (Eds. Zs.
Kajcsos et al.), Budapest, 1981, p.955, Nucl. Instr. Meth. 199, 397
(1982)
[96] T. Lohner, G. Mezey, E. Kotai, A. Manuaba, F. Pászti,
J. Gyulai: Damage thickness measurement of ion-implanted Si layers by
ellipsometry and channeling, Working meeting on ion implantation in
semiconductors and other materials (Ed. M. Setvak) Prague, 1981, p.123
[97] T. Lohner, G. Mezey, E. Kotai, A Manuaba, F. Paszti, J. Gyulai:
Measurement of the degree of amorphousness by channeling and
ellipsometry, Working meeting on ion implantation in semiconductors and
other materials (Ed. M. Setvak) Prague, 1981, p.125
[98] R. M. Bayazitov, R.V. Aganov, I.B. Khaibullin, E.I. Shtyrkov, T.
Lohner, G. Mezey, E. Kotai, J. Gyulai: Analiz segregatsii primesi pri
lazernom otzhige, Working meeting on ion implantation in semiconductors
and other materials (Ed. M. Setvak) Prague, 1981, p. 53
[99] J. Giber, A. Solyom, L. Bori, J. Gyulai: Modification of the MISR
method with the use of standard elements, Proc. Conf. Secondary Mass
Spectrometry SIMS III (Eds. A. Benninghoven, J. Giber, J. Laszlo, M.
Riedel. H. W. Werner) Springer Vl., 1982, p. 269
[100] T. Lohner, G. Mezey, E. Kotai, F. Paszti, A. Manuaba, J. Gyulai:
Characterization of ion implanted silicon by ellipsometry and
channeling, KFKI-1982-90, Report, 1982; Nucl. Instr. Meth., 209/210,
615 (1983)
[101] J. Gyulai: Accelerators in analytical problems of semiconductors,
Atomki Közl. 22/1, p. 64 (in Hungarian) and in Application of
accelerators in the economy (Ed. I. Mahunka), Akad. Kiadó,
Budapest, 1983, p. 113
[102] F. Paszti, G. Mezey, L. Pogany, E. Kotai, A. Manuaba, L. Pocs, T.
Lohner, J. Gyulai, G. Bürger, P. Kostka, E. Klopfer:
Investigation of plasma contamination in the MT-1 tokamak and model
experiments on high energy exfoliation, Proc. 10th European Conf. on
Controlled Fusion and Plasma Physics (Moscow, 1981), Vol. 1, A8-a
[103] G. Petö, T. Lohner, J. Kanski, J. Gyulai: Investigation
of ion-bombarded and annealed Si by UPS and RBS methods, Nucl. Instr.
Meth., 199, 445 (1982)
[104] G.Mezey, F. Paszti, L. Pogany, A. Manuaba, M. Fried, E. Kotai, T.
Lohner, L. Pocs, J. Gyulai: Blistering and exfoliation on gold by
1-3.52 MeV helium particles, Ion implantation into metals, Proc. 3rd
Int. Conf. on Modification of Surface Properties of Metals by Ion
Implantation, UMIST, Manchester, 1981 (Eds.: V. Ashworth, W.A. Grant,
K.P.M. Procter), Pergamon Press, Oxford, 1982, p.293
[105] G. Drozdy, T. Lohner, P. Revesz, K. Tarnay, J. Gyulai: Ion
implantation process modelling and its verification, Proc. 3rd
Microelectronics Conf., Siofok, Hungary, 1982, p. 197
[106] J. Gyulai: Ion-implantation and laser annealing applied to device
technology, in "Trends in Physics" Papers presented Conf. of the
European Phys. Society, Istanbul, 1981, Ed. I.A. Dobrantu (Central
Inst. Phys. Bucuresti, Romania) p. 863
[107] J.W. Mayer, J. Gyulai: Implantation in Semiconductors, in Applied
Atomic Collision Physics, Vol. IV (Ed. S. Datz), Acad. Press, NY, 1983,
pp.545-575
[108] J. Gyulai: Rutherford Backscattering Spectrometry, in Modern
Problems of Surface Physics (Ed. I.J. Lalov) World Sci. Publ. Co.,
Singapore, 1983, pp. 745-779
[109] P. Revesz, J. Gyimesi, J. Gyulai: Formation of titanium silicide
at atmospheric pressure, in Defects in Semiconductors II (Eds. S.
Mahajan, J.W. Corbett), MRS Symp. Proc., Vol. 14, North-Holland, N.Y.
1983, p.417-421
[110] R.M. Fastow, J. Gyulai, J.W. Mayer: Transient conductivity
measurements in pulsed ion beam annealed silicon, in Laser-Solid
Interactions and Transient Thermal Processing of Materials, MRS Symp.
Proc. Vol. 13, North-Holland, N.Y. 1983, p. 69-74
[111] J. Gyulai, R. Fastow, K. Kavanagh, M.O. Thompson, C.J.
Palmström, C.A, Hewett, J.W. Mayer: Crystallization of
amorphous silicon films by pulsed ion beam annealing, MRS Symp. Proc.
Vol. 13, North-Holland, N.Y. 1983, p. 455-460
[112] D.E. Fowler, J. Gyulai, C. Palmström: Electron inelastic
mean free path (imfp) in single crystal BeO by Rutherford
backscattering (RBS) and Auger electron spectroscopy (AES), J. Vac.
Sci. Technol., A 1/2, 1021 (1983)
[113] L.S. Hung, M. Nastasi, J. Gyulai, J.W. Mayer: Ion-induced
amorphous and crystalline phase formation in Al/Ni, Al/Pd and Al/Pt
thin films, Appl. Phys. Lett., 42, 672 (1983)
[114] C.J. Palmström, J. Gyulai, J.W. Mayer: Phase separation
in interactions of tantalum-chromium alloy on Si, J. Vac. Sci.
Technol., A 1/2 452 (1983)
[115] L.S. Hung, J. Gyulai, J.W. Mayer, S.S. Lau, M.-A. Nicolet:
Kinetics of TiSi2 formation by thin Ti films in Si, J. Appl. Phys. 54,
5076-5080 (1983)
[116] I. Krafcsik, J. Gyulai, C. Palmström, J.W. Mayer:
Influence of Cu as an impurity in Al-Ti and Al-W thin film reactions,
Appl. Phys. Lett. 43, 1015 (1983)
[117] G. Drozdy, T. Lohner, P. Revesz, K. Tarnay, J. Gyulai: Ion
implantation process modelling, Vacuum 33, 125 (1983)
[118] T. Lohner, E. Kotai, F. Paszti, A. Manuaba, M. Fried, J. Gyulai:
Characterization of Ion-implanted silicon by Rutherford backscattering
and ellipsometry, J. Radioanal. Nucl. Chemistry 83, 75 (1984)
[119] E. Lendvay, M. Harsy, T. Görög, I. Gyuro, I.
Pozsgai, F. Koltai, J. Gyulai, T. Lohner, G. Mezey, E. Kotai, F.
Paszti, V.T. Kharyapov, N.A. Kulchitskiy, L.L. Regel: The growth of
GaSb under microgravity conditions, J. Cryst. Growth 71, 538-549 (1985)
[120] L.S. Hung, J. Gyulai, J.W. Mayer: Ion Induced Reaction of Ni-Au
Bilayers both on Si and on SiO2, J. Appl. Phys. 54, 5750-5754 (1983)
[121] R. Fastow, J. Gyulai, M. Nastasi, P.G. Zielinski: Rapid Surface
Melting of Cu60Zr40 Metallic Glass, J. Mat. Sci. Lett., 3, 105 (1984)
[122] E. Lendvay, M. Harsy, T. Görög, I. Gyuro, F.
Koltai, J. Gyulai, T. Lohner, F. Paszti, G. Mezey, E. Kotai, M. Ranki,
L.L. Regel, V.T. Kharyapov, N.A. Kulchitskiy: Eksperiment "Etves":
Viraschivaniye kristallov GaSb v usloviyah mikrogravitatsii, "Salyut-6"
- "Soyuz" Materialovedenie i tekhnologiya, Nauka, Moskva, 1985, p. 79,
Trudi Konf. Materialovedenie v kosmose, Yurmala, 1983
[123] T. Lohner, L. Varga, G. Mezey, F. Paszti, E. Kotai, J. Gyulai,
L.L. Regel, N.A. Kulchitskij, V.T. Khryapov: Issledovanie kristallov
GaSb i GaAs, virashchennih v usloviyah mikrogravitatsii, metodom OP i
PIXE, "Salyut-6" - "Soyuz" Materialovedenie i tekhnologiya, Nauka,
Moskva, 1985, Trudi Konf. Materialovedenie v kosmose, Yurmala, 1983, p.
90-97
[124] I. Gyuro, E. Lendvay, T. Görög, T. Lohner, M.
Harsy, I. Pozsgai, K. Somogyi, J. Gyulai, M. Ranky, L. Varga, R. Kotai,
J. Giber, L. Bori, L.L. Regel, N.A. Kulchitskiy, V.T. Khryapov: Crystal
growth of GaSb under microgravity conditions, IAF Congress, Budapest,
IAF-83-153; Acta Astronautica 11, 361 (1984)
[125] G. Mezey, E. Kotai, P. Revesz, A. Manuaba, T. Lohner, J. Gyulai,
M. Fried, G. Vizkelethy, F. Paszti, G. Battistig: Enhanced Sensitivity
of Oxygen Detection of the 3.045 MeV (a ,a ) Elastic Scattering and its
Application, Acta Phys. Hung. 58, 39 (1985)
[126] G. Valyi, Lu Zhaokang, A. Steffen, M. Maier, P. Balk, J. Gyulai:
Oxidation behavior of TiSi2/poly-Si double layers, Thin solid films
116, 383 (1984)
[127] J. Gyulai: Damage Annealing in Silicon and Electrical Activity,
in Ion Implantation Science and Technology, Ed. J.F. Ziegler, Academic
Press, New York, 1984, p. 139
[128] J. Gyulai, J. Paitz: Zone refining and material transport studies
under microgravity conditions, KFKI-1984-74
[129] M. Fried, T. Lohner, E. Jaroli, G. Vizkelethy, G. Mezey, J.
Gyulai, M. Somogyi, H. Kerkow: Investigation of Ion-implanted
Semiconductors by Ellipsometry and Backscattering Spectrometry, Thin
Solid Films 116, 191 (1984)
[130] T. Lohner, G. Mezey, M. Fried, L. Ghita, C. Ghita, A. Mertens, H.
Kerkow, E. Kotai, F. Paszti, F. Banyai, Gy. Vizkelethy, E. Jaroli, J.
Gyulai, M. Somogyi: Analysis of high dose implanted silicon by high
depth resolution RBS and spectroscopic ellipsometry, Mat. Res. Soc.
Symp. Proc. Vol. 35, in Energy Beam-Solid Interactions and Transient
Thermal Processing /D.K. Biegelsen, G.A. Rozgonyi, C.V. Shank,
eds./North-Holland, 1985, p. 523
[131] M. Nastasi, R. Fastow, J. Gyulai, J.W. Mayer, S.J. Plimpton, E.D.
Wolf, B.M. Ullrich: Ion induced reactions in Fe/Al Bilayers by
Pulsed-Beam Ion irradiation and Xe implantation, Nucl. Instr. Meth.
B7/8, 585 (1985)
[132] F. Paszti, Cs. Hajdu, A. Manuaba, N.T. My, E. Kotai, L. Pogany,
G. Mezey, M. Fried, Gy. Vizkelethy, J. Gyulai: Flaking and wave-like
structure on MeV energy high-dose 4He+ bombarded silicon, Nucl. Instr.
Meth. B7/8, 371 (1985)
[133] J. Gyulai, R.M. Fastow, M. Nastasi, J.W. Mayer: Regrowth and
compound formation by pulsed ion beams, Proc. Int. Conf. Energy Pulse
Modification of Semiconductors and related materials /Ed. K. Hennig/,
Rossendorf, 1985, ZfK-555, p. 188-192
[134] I.B. Khaibullin, G.G. Zakirov, M.M. Zaripov, T. Lohner, L.
Pogany, G. Mezey, E. Kotai, F. Paszti, M. Fried, J. Gyulai: Influence
of heavy ion bombardment and laser annealing on the structural and
optical properties of germanium, Proc. Int. Conf. Energy Pulse
Modification of semiconductors and related materials /Ed. K. Hennig/,
Rossendorf, 1985, ZfK-555, p. 188-192
[135] J. Gyulai, P. Revesz: Reakcii metall-poluprovodnik i
metall-metall pod termicheskim i radiatsionnym vozdeystviem, Ionnaya
implantatsiya v poluprovodnikah i drugikh materialakh /Ed. Z.V.
Januskiavicius et al. / Min. V.S. Obr. LSSR, Vilnius, 1985, p. 17
[136a] G. Mezey, E. Kótai, P. Révész,
A. Manuaba, T. Lohner, J. Gyulai, M. Fried, G. Vizkelethy, F.
Pászti, G. Battistig: Enhanced sensitivity of oxigen
detection of the 3.045 MeV (He4,He4) elastic scattering and its
application; Acta Phys. Hung. v.58 (1985) 39
[136b] T. Lohner, E. Jaroli, M. Fried, G. Mezey, E. Kotai, F. Paszti,
A. Manuaba, J. Gyulai: Ellipsometric characterization of ion implanted
silicon, Ionnaya implantatsiya v poluprovodnikakh i drugikh materialakh
/Ed. Z.V. Januskiavicius et al. /Min. V.S. Obr. LSSR, Vilnius, 1985, p.
203
[137] M. Nastasi, J.C. Barbour, J. Gyulai, L.S. Hung, J.W. Mayer: A
technique for the production of a thin Film with a linearly varying
composition, J. Vac. Sci. Technol. A3, 903 (1985)
[138a] P. Varga, G. Vertosi, I. Dyulai, G. Kis, N. Kroo, Zs.
Szentirmay, E.M. Soboleva, A.G. Sobolev, S.I. Sagitov, A.V. Uskov:
Spektri svecheniya struktur metall-barier-metall, Kvant. elektronika
12, 2161 (1985) (in Russian)
[138b] A. Tóth, G. Kadar, Sz. Sandor, J. Gyulai: Non planar
single crystal silicon membranes prepared by combined etching
techniques, Proc. Eurosensors'87, Cambridge, U.K., p.55 (1987)
[139a] M. Fried, T. Lohner, Gy. Vizkelethy, E. Jaroli, G. Mezey, J.
Gyulai: Combined application of multiple-angle-of-incidence
ellipsometry and back-scattering spectrometry in characterization of
ion-implanted silicon layers, Proc. Symp. on Electronics Technology,
Opt. Acoustical and Filmtech. Soc. Budapest, 1985, Vol. I, p. 105-109
[139b] T. Lohner, G. Mezey, M. Fried, L. Ghita, C. Ghita, A. Mertens, .
Kerkow, E. Kótai, F. Pászti, F.
Bányai, Gy. Vizkelethy, E. Jároli, J. Gyulai, M.
Somogyi: Analysis of high dose implanted silicon by high depth
resolution RBS and spectroscopic ellipsometry; MRS Symp. Proc. vol.35,
in "Energy Beam-Solid Interactions and Transient Thermal Processing";
eds. D. K. Biegelsen,G.A. Rozgonyi,C.V. Shank; North-Holland, 1985, p.
523
[140] H.V. Suu, G. Petö, G. Mezey, F. Paszti, E. Kotai, M.
Fried, A. Manuaba, E. Zsoldos, J. Gyulai: Formation of GdSi2 under UHV
evaporation and in situ annealing, Appl. Phys. Lett. 48, 437 (1986)
[141] H.V. Suu, G. Mezey, G. Petö, F. Paszti, E. Kotai, A.
Manuaba, M. Fried, J. Gyulai: Oxidation behavior of GdSi2 studied by
RBS, Nucl. Instr. Meth. B15, 247 (1986)
[142] G. Battistig, E.F. Kennedy, P. Revesz, J. Gyulai, G. Kadar, J.
Gyimesi, G. Drozdy, G. Vizkelethy: Study of radiation damage in an ion
implanted rare-earth iron garnet crystal, Nucl. Instr. Meth. B15, 372
(1986)
[143] M. Fried, T. Lohner, G. Vizkelethy, E. Jaroli, G. Mezey, J.
Gyulai: Investigation of solid phase epitaxial regrowth on
ion-implanted silicon by backscattering spectrometry and ellipsometry,
Nucl. Instr. Meth. B15, 422 (1986)
[144] E. Jaroli, N.Q. Khanh, G. Mezey, E. Zsoldos, B. Kovacs, I.
Mojzes, T. Lohner, E. Kotai, A. Manuaba, M. Fried, J. Gyulai:
Intermetallic compound formation of Ge-Ni and Ge-Al-Ni systems by
furnace annealing and ion beam intermixing, Nucl. Instr. Meth. B15, 703
(1986)
[145] I.B. Khaibullin, G.G. Zakirov, M.M. Zaripov, T. Lohner, L.
Pogany, G. Mezey, M. Fried, E. Kotai, F. Paszti, A. Manuaba, J. Gyulai:
Effect of heavy ion implantation and laser annealing on the structural
properties of germanium, Phys. Stat. Sol. /a/ 94, 371 (1986)
[146] I. Krafcsik, L. Kiralyhidi, P. Riedl, J. Gyulai, M. Fried:
Implantation with ion pulses, Phys. Stat. Sol. /a/ 94, 652 (1986)
[147] G. Vizkelethy, M. Fried, G. Mezey, F. Paszti, J. Gyulai:
Simulations on energetic ions in solids by Monte Carlo method /SEISM/
and its comparison with experiments, Phys. Stat. Sol. /a/ 94, 413 (1986)
[148] H.V. Suu, F. Paszti, G. Mezey, G. Petö, A. Manuaba, M.
Fried, J. Gyulai: New method to measure low Schottky barriers on n-type
silicon, J. Appl. Phys. 59, 3537 (1986)
[149] F. Abel, B. Agius, J. Gyulai: Absolute determination of 1012 cm-2
As in Si by RBS, Nucl. Instr. Meth. B21, 77 (1987)
[150] I. Krafcsik, L. Kiralyhidi, P. Riedl, M. Fried, J. Gyulai, F.
Pavlyak: Repetitive mode pulsed ion implanter with magnetically
insulated diode, Nucl. Instr. Meth. B21, 604 (1987)
[151] E. Jaroli, B. Pecz, J. Gyulai, M. Fried, L. Petras, E. Zsoldos,
T. Lohner, I. Mojzes: Effect of ion beam treatment on thermal annealing
of GaAs-Au layer structures, Nucl. Instr. Meth. B19/20, 767 ,(1987)
[152] E. Kotai, F.Paszti, A. Manuaba, G. Mezey and J. Gyulai: Damage
structure induced by high-dose helium implantation into single crystal
silicon, Nucl. Instr. Meth. B19/20, 312 (1987)
[153] M. Fried, T. Lohner, E. Jaroli, G. Vizkelethy, E. Kotai and J.
Gyulai: Optical properties of thermally stabilized ion implantation
amorphized silicon, Nucl. Instr. Meth. B19/20, 577 (1987)
[154] I. Geröcs, G. Molnar, E. Jaroli, E. Zsoldos, G.
Petö, J. Gyulai, E. Bugiel: Epitaxy of orthorhombic gadolinium
disilicide on <100> silicon, Appl. Phys. Lett. 51, 2144
(1987)
[155] J. Gyulai: Problems and limits of ion beam technologies, in
Physical problems in microelectronics, Ed. J. Kassabov, World
Scientific, Singapore, 1987, p. 324-338
[156] G. Odor, J. Gyulai: Lattice location calculation of elements
implanted in Si by Miedema parameters, Nucl. Instr. Meth. B30 /2/,
217-218 (1988)
[157] J. Gyulai: Experimental Annealing and Activation, in Ion
Implantation Science and Technology, 2nd. Ed. J.F. Ziegler, Acad.
Press, New York, 1988 pp. 93-164
[158] E. Jaroli, B. Pecz, R. Veresegyhazy, F. Paszti, T. Lohner, M.
Fried, I. Mojzes and J. Gyulai: Effect of ion beam mixing on the
evolution of arsenic from the Au-GaAs system, Phys. Stat. Sol. /a/ 107,
K15 (1988)
[159] G. Serfözö, R. Naujokaitis, I. Krafcsik, L.
Dozsa, G. Battistig, P. Riedl, E. Klopfer, N.N. Gerasimenko and J.
Gyulai: Pulsed ion implantation of silicon with selenium, Proc. Int.
Conf. Energy Pulse and Particle Beam Modification of Materials /Ed. K.
Henning/, Dresden, 1987, Akademie-Verlag Berlin, 1988 p. 74
[160] R. Banisch, B. Tillack, B. Hunger, P. Barna, J. Gyulai, M. Adam
and V. Schiller: Electrical characterization of thick SOI-films, Proc.
Int. Conf. Energy Pulse and Particle Beam Modification of Materials
/Ed. K. Henning/, Dresden, 1987, Akademie-Verlag Berlin, 1988, p. 446
[161] N.Q. Khanh, M. Fried, G. Battistig, Z. Laczik, T. Lohner, E.
Jaroli, V. Schiller and J. Gyulai: Ellipsometric and ion backscattering
measurements of the properties of Silicon-On-Insulator structure formed
by thermally activated redistribution of high-dose ion implanted
nitrogen, Phys. Stat. Sol. /a/ 108, K35 (1988)
[162] P. Marcus, M. Moscatelli, C. Cohen, J. Gyulai, D. Schmaus and M.
Sotto: Natural oxide and passive films on Ni-Mo J. Electrochem. Soc.
135, 11 (1988)
[163] G. Molnar, I. Geröcs, G. Petö, E. Zsoldos, E.
Jaroli and J. Gyulai: Thickness-dependent formation of Gd-silicide
compounds, J. Appl. Phys. 64/12/, 6746 (1988)
[164] J. Gyulai and I. Krafcsik: Comparative status of pulsed ion
implantation. Nucl. Instr. Meth. B37/38, 275-279 (1989)
[165] M. Fried, T. Lohner, J.M.M. De Nijs, A. Van Silfhout, L.J.
Hanekamp, N.Q. Khanh, Z. Laczik and J. Gyulai: Non-destructive
characterization of nitrogen-implanted silicon-on-insulator structures
by spectroscopic ellipsometry, Material Sci. Eng. B2, 131-137 (1989)
[166] M.Fried, T.Lohner, J.M.M. de Nijs, A. van Silfhout, L.J.Hanekamp,
Z.Laczik, N.Q.Khanh, J.Gyulai: Nondesctructive characterization of
nitrogen-implanted silicon-on-insulator structures by spectroscopic
ellipsometry, J. Appl. Phys. 66 (10), 5052-5057. (1989)
[167] J. Gyulai: Some Recently Emerged Problems of Ion Implantation,
Phys. Stat. Sol. /a/ 112, 237 (1989);
[168] R. Banisch, B. Tillack, H.H. Richter, B. Hunger, P. Barna, V.
Schiller, A. Adam and J. Gyulai: On the characteristics of CMOS
Transistors in thick SOI films, Phys. Stat. Sol. /a/ 112, 721 (1989)
[169] C. Dehm, G. Valyi, J. Gyulai and H. Ryssel: Ion-beamed mixed
MoSi2 layers: Formation and Contact Properties, ESSDERC'89, A.
Heuberger-H. Ryssel-P. Lange, /Eds./ Springer-Verlag, Berlin, 1989, p.
253-256
[170] D.K. An, K. Madl, A. Barna, G. Battistig, J. Gyulai: The
simultaneous diffusion of gold and boron into silicon, phys. stat.
sol.(a) 116, 561 (1989)
[171] V.S. Lysenko, A.N. Nazarov, I.M. Zaritskii, G. Serfozo, G.
Battistig, J. Gyulai, L. Dozsa: RF plasma modofocation of heavily
destroyed ion implantated subsurface silicon layers, phys. stat. sol.
a, 115, 75 (1989)
[172] J. Gyulai: Some limitations of ion implantation; a review,
Turkish J.of physics (Spec. issue-1) 14, 206 (1990)
[173] G.Q.Yang, N.Q.Khanh, M.Fried, E.Kotai, Vera Schiller, L.C.Lu, J.
Gyulai, S.C.Zou: Damage Annealing Behavior in Diatomic Phosphorus Ion
Implanted Silicon, Rad.Eff.and Def.Solids, 115, 183 (1990).
[174] J.Gyulai, F.Pavlyak, I.Krafcsik, A.Solyom, P.Riedl, L.Bori:
Calibration of SIMS measurements by ion implantation, Periodica
Polytechnica, Chem. Engineering, 34, 81 (1990).