MAGYAR TUDOMÁNYOS AKADÉMIA MÛSZAKI FIZIKAI ÉS ANYAGTUDOMÁNYI KUTATÓ INTÉZET HUNGARIAN ACADEMY OF SCIENCES RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE
Head:  B. Szentpáli, Ph.D.	DEVICE PHYSICS DEPARTMENT

 
  Last updated: November 3, 2003.
 
 
 

Sponsor:  National Research Fund (OTKA)
Contract No.: T030421.
 

Co-ordinator:  Participant:

Zsolt J. Horváth M. Ádám

Duration: 1999-2002.

Aim of the project:

    Study of the effect of preparation, microstructure and geometry on the vertical electrical behaviour of amorphous and crystalline Al/SiGe/Si structures including multilayers and low dimensional structures, in the temperature range of 80-320 K. Interpretation of the physical origin of obtained electrical characteristics including anomalies.

Related papers and lectures:

Zs.J.Horváth, Zs.Czigány, M.Ádám, I. Szabó, Vo Van Tuyen:
Effect of the microstructure of amorphous Si/Ge multilayers and SiGe single layers on the electrical behaviour of Al/p-Si Schottky structures
Third Int. School-Conf. Physical Problems in Material Science of Semiconductors, Sept. 7-11, 1999, Chernivtsi, Ukraine, Abstract Booklet p.193.

Zs.J.Horváth:
Electrical breakdown in semiconductor structures
Third Int. School-Conf. Physical Problems in Material Science of Semiconductors, Sept. 7-11, 1999, Chernivtsi, Ukraine, Abstract Booklet p.234.

Zs.J.Horváth:
Electrical breakdown in MIS and MS systems (Invited paper)
in: Physics of Semiconductor Devices, Allied Publisher Ltd., New Delhi, India, 2000, (Eds. V. Kumar and S. K. Agarwal), pp. 760-767.

Zs.J.Horváth, M.Ádám, I.Pintér, B.Cvikl, D.Korosak, K.Jarrendahl, E. Gombia, R.Mosca, P.Godio, G.Borionetti, Vo Van Tuyen, M.Serényi, Zs.Czigány:
Engineered Schottky junctions on p-Si
Workshop on Solid State Surfaces and Interfaces II, SSSI-II, June 20-22, 2000, Bratislava, Slovakia, Book of Extended Abstracts pp. 54-55.

M. Serényi, Á. Nemcsics, J. Betko, Zs. Zolnai, N. Q. Khanh, Zs. J. Horváth:
Sputtered a-SiGe:H layers for solar cell purposes
Workshop on Solid State Surfaces and Interfaces II, SSSI-II, June 20-22, 2000, Bratislava, Slovakia, Book of Extended Abstracts p. 65.

Zs. J. Horváth, M. Ádám, I. Szabó, Vo Van Tuyen, M. Serényi, Zs. Czigány, E. Pashaev, K. Jarrendahl, L. K. Orlov:
Vertical electrical behaviour of Al/SiGe/Si structures
VI Polish Conf. on Crystal Growth PCCG-VI, May 20-23, 2001, Poznan, Poland, Abstract Book, p.95.

Zs. J. Horváth, K. Jarrendahl, M. Ádám, I. Szabó, Vo Van Tuyen, M. Serényi, Zs. Czigány:
Electrical peculiarities in Al/Si/Ge/.../Ge/Si and Al/SiGe/Si structures
8th Int. Conf. Formation of Semicond. Interfaces, June 10-15, 2001, Sapporo, Japan, Final Program & Collected Abstracts, p.264.

Zs. J. Horváth, M. Ádám, I. Szabó, Vo Van Tuyen, E. Pashaev, S. Yakunin, K. Jarrendahl, L. K. Orlov, M. Serényi, Zs. Czigány:
Electrical anomalies in Al/SiGe/Si structures
9th Int. Autumn Meeting "Gettering and Defect Engineering in Semiconductor Technology GADEST 2001, Sept. 30 - Oct. 3, 2001, Santa Tecla, Italy.

Zs. J. Horváth, M. Ádám, I. Szabó, Vo Van Tuyen, M. Serényi, E. Pashaev, S. Yakunin, L. K. Orlov:
Vertical electrical behaviour of amorphous and crystalline Al/SiGe/Si structures
Vserossijskaja nauchno-tekhnicheskaja konferentcija Mikro- i nanoelektronika - 2001, Oct. 1-5, 2001, Zvenigorod, Russia, Tezisy dokladov, tom 2, p. P2-11.

Zs. J. Horváth, K. Jarrendahl, L. K. Orlov, M. Serényi, M. Ádám, I. Szabó, B. Cvikl, D. Korosak, E. Pashaev, S. Yakunin, Vo Van Tuyen, Zs. Czigány:
Vertical electrical properties of Al/SiGe/Si structures
Proc. 37th Int. Conf. of Microelectronics, Devices and Materials, Oct. 10-12, 2001, Bohinj, Slovenia, pp.143-148.

Zs.J.Horváth:
Vertical electrical behaviour of GaAs and Si based low dimensional structures (Invited paper)
in: Physics of Semiconductor Devices, Allied Publisher Ltd., New Delhi, India, 2002, (Eds. V. Kumar and P. K. Basu), pp. 265-272.

Zs.J.Horváth, K.Jarrendahl, M.Ádám, I.Szabó, Vo Van Tuyen, Zs.Czigány:
Electrical peculiarities in Al/Si/Ge/.../Ge/Si and Al/SiGe/Si structures
Appl. Surf. Sci., 190, 403-407, 2002.

Zs. J. Horváth, L. K. Orlov, M. Ádám, A. V. Potapov, V.A. Tolomasov, I. Szabó, E. Pashaev, S. Yakunin, Vo Van Tuyen:
Effect of surface treatment on the electrical behaviour of Al/SiGe/Si heterostructures
6th Int. Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technolgies, EXMATEC 2002, May 26-29, 2002, Budapest, Hungary, Book of Abstracts p.188.

M.Serényi, J.Betko, Á.Nemcsics, N.Q.Khánh, M.Morvic:
Fabrication of a-SiGe structure by magnetron sputtering for solar cell purposes
6th Int. Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technolgies, EXMATEC 2002, May 26-29, 2002, Budapest, Hungary, Book of Abstracts, p.80;
Phys. Stat. Sol. (C), 0, 857-861, 2003.

Zs. J. Horváth, M. Serényi, M. Ádám, I. Szabó, E. Badaljan, V. Rakovics:
Al/a-SiGe:H/c-Si m-i-p diodes - a new type of heterodevices
6th Int. Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and
Technologies, EXMATEC 2002, May 26-29, 2002, Budapest, Hungary, Book of Abstracts p.215.
Phys. Stat. Sol. (C), 0, 1066-1069, 2003

B. Põdör, J. Balázs, Zs. J. Horváth, K. Jarrendahl, Zs. Czigány, E. Pashaev:
Optical and electrical characterisation of sputtered Si/Ge multilayers and mixed SiGe layers
6th Int. Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technolgies, EXMATEC 2002, May 26-29, 2002, Budapest, Hungary, Book of Abstracts p.217.

Zs. J. Horváth, M. Ádám, I. Szabó, L. K. Orlov, A. V. Potapov, V.A. Tolomasov, B. Cvikl, D. Korosak, E. Pashaev, S. Yakunin:
Effect of surface treatment on the electrical behaviour of Al/Si and Al/SiGe junctions
9th Joint Vacuum Conf., JVC-9, June 16-20, 2002, Schloss Seggau, Austria, Final Programme and Book of Abstracts p. 50.

Zs. J. Horváth, M. Serényi, M. Ádám, and I. Szabó:
Electrical pecularities of Al/a-SiGe/c-Si junctions
9th Joint Vacuum Conf., JVC-9, June 16-20, 2002, Schloss Seggau, Austria, Final Programme and Book of Abstracts p. 52.

L. K. Orlov, N. L. Ivina, A. V. Potapov, R. A. Rubtsova, Zs. J. Horváth, E. M. Pashaev, S. N. Yakunin, V. I. Vdovin, E. A. Steinman:
Multilayer strained Ge-Si_1-xGe_x nanostructures: Fabrication problems, interface characteristics and physical properties
1st Ukrainian Conf. Semicond. Phys. UCSP-1, Sept. 10-14, Odessa, Ukraine, Abstracts Vol.2 pp.120-121.

Zs. J. Horváth, M. Serényi, E. Badaljan, M. Ádám, I. Szabó:
A new heterodevice: the Al/a-SiGe:H/c-Si m-i-p diode
1st Ukrainian Conf. Semicond. Phys. UCSP-1, Sept. 10-14, Odessa, Ukraine, Abstracts Vol.2 p.157.

Zs. J. Horváth, L. K. Orlov, M. Ádám, A. V. Potapov, V.A. Tolomasov, I. Szabó, E. Pashaev, S. Yakunin:
Effect of surface treatment on the electrical behaviour of Al/SiGe/Si and Al/Si/Ge/.../Si heterostructures
1st Ukrainian Conf. Semicond. Phys. UCSP-1, Sept. 10-14, Odessa, Ukraine, Abstracts Vol.2 p.159.

Zs. J. Horváth:
Vertical electrical behaviour of amorphous and crystalline Al/SiGe/Si structures (Invited paper)
Proc. 3rd SSSI: Solid State Surfaces and Interfaces, Nov. 19-21, 2002, Smolenice Castle, Slovak
Republic, Eds. K. Gmucová, R. Brunner, Comenius University Press, Bratislava, 2002, pp.23-25.

Zs. J. Horváth, B. Pődör, J. Balázs, K. Jarrendahl, Zs. Czigány, E. Pashaev, S. Yakunin:
Electrical and optical characterisation of sputtered Si/Ge multilayers and mixed SiGe layers
Proc. 3rd SSSI: Solid State Surfaces and Interfaces, Nov. 19-21, 2002, Smolenice Castle, Slovak
Republic, Eds. K. Gmucová, R. Brunner, Comenius University Press, Bratislava, 2002, pp.29-30.)

M.Serényi, J.Betko, Á.Nemcsics, N.Q.Khanh, D.K.Basa, M. Morvic:
Study of the RF sputtered hydrogeneted amorphous silicon-germanium thin films
Thin Solid Films, submitted.

Recent updates:

Zs. J. Horváth, L. K. Orlov, N. L. Ivina, E. S. Demidov, V. I. Vdovin, M. Ádám, I. Szabó, E. M.
Pashaev, S. N. Yakunin:
Effect of dislocations in relaxed MBE SiGe layers on the electrical behaviour of heterostuctures
Materials of Int. Scientific-Practical Conf. "Structural Relaxation in Solids", May 13-15, 2003,
Vinnitsa, Ukraine, pp. 128-129.

Zs. J. Horváth, B. Pődör, J. Balázs, M. Ádám, K. Jarrendahl, I. Szabó, Zs. Czigány:
Correlation between the optical and electrical behaviour of Si/Ge multilayers and SiGe layers
XXXII Int. School on Physics of Semiconducting Compounds "Jaszowiec 2003", May 30 - June 6, 2003, Jaszowiec, Poland, Program and Abstracts p. 147.

Zs. J. Horváth, M. Ádám, I. Szabó, L. K. Orlov, A. V. Potapov, V.A. Tolomasov:
Electrical behaviour of Al/SiGe/Si heterostructures: Effect of surface treatment and dislocations
Proc. 9th Int. Conf. on the Formation of Semiconductor Interfaces, Madrid, Sept. 15-19, 2003; Appl. Surf. Sci., submitted.

Zs. J. Horváth, L. K. Orlov, V. Rakovics, N. L. Ivina, A. L. Tóth, E. S. Demidov, F. Riesz, V. I. Vdovin:
Effect of crystal defects on the electrical behaviour of InP and SiGe epitaxial structures
Proc. 10th Int. Conf. on Defects - Recognition, Imaging and Physics in Semiconductors, Sept. 29 - Oct. 2, Batz-sur-Mer, France;
Euro. Phys. J. AP, submitted.

Zs. J. Horváth, L. K. Orlov, M. Ádám, A. V. Potapov, I. Szabó, V.A. Tolomasov, B. Cvikl,
Yu. M. Ivanov, D. Korosak, E. Pashaev:
Electrical behaviour of Al/Si and Al/SiGe junctions: Effect of surface treatment
Int. Conf. "Micro- and nanoelectronics - 2003", October 6-10, 2003, Zvenigorod, Moscow district, Russia, Abstracts P1-66.

Zs. J. Horváth, G. Molnár, G. Pető, I. Dézsi, R. Loo, M. Caymax, K. Z'd'ánsky:
Epitaxial erbium silicide contact to silicon-germanium
Int. Conf. "Micro- and nanoelectronics - 2003", October 6-10, 2003, Zvenigorod, Moscow
district, Russia, Abstracts P1-65.

Zs. J. Horváth:
Vertical electrical behaviour of amorphous and crystalline Si/Ge and SiGe/Si structures (Invited paper)
Proc. 12th Int. Workshop Physics of Semiconductor Devices, Dec. 16-20, 2003, Madras, India, (Eds. K. N. Bath and
A. DasGupta), Narosa Publishing House, New Delhi, 2004, pp. 89-94.

Zs. J. Horváth, G. Molnár, G. Pető, I. Dézsi, R. Loo, M. Caymax:
Erbium silicide contact to silicon-germanium
12th Int. Workshop on Physics of Semiconductor Devices, Dec. 16-20, 2003, Madras, India, presented.

Zs. J. Horváth, L. K. Orlov, N. L. Ivina, E. S. Demidov, V. I. Vdovin, M. Ádám, I. Szabó, L. Dózsa, E. M. Pashaev, Yu. M. Ivanov, S. N. Yakunin:
Effect of dislocations in relaxed MBE SiGe layers on the electrical behaviour of SiGe/Si heterostuctures
Functional Materials, submitted.

 
 

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