Last updated: June 11, 2004.

International refereed journals

Zs.J.Horváth, G.Stubnya, P.Tüttõ:
Resistivity measurements on chemically vapour-deposited Si₃N₄ films
Thin Solid Films 69, L51-54, 1980.

Zs.J.Horváth:
Memory hysteresis measurements on silicon oxynitride films
Solid-State Electron. 23, 1053-1054, 1980.

P.Tüttõ, G.Stubnya, Zs.J.Horváth:
Depth inhomogeneity of CVD Si₃N₄ layers
IEE Proc. Pt.I.: Solid State and Electron Devices 129, 103-104, 1982.

Zs.J.Horváth, I.Gyúró, M.Németh-Sallay, B.Szentpáli, K.Kazi:
GaAs Schottky varactors for linear frequency tuning in X-band
Phys. Stat. Sol. (A) 94, 719-726, 1986.

I.Gyúró, Zs.J.Horváth:
GaAs VPE layers for microwave Schottky tuning varactors
Acta Phys. Hung. 61, 165-168, 1987.

I.Gyúró, L.Dobos, Zs.J.Horváth, E.K.Pál, V.I.Fineberg, R.V.Konakova, Yu.A.Thorik:
SEM investigations of macroscopic crystal defects in GaAs VPE layers
Acta Phys. Hung. 61, 263-266, 1987.

Zs.J.Horváth, P.Tüttõ, M.Németh-Sallay, G.Stubnya, T.Németh, I.Gyúró, V.I.Fineberg:
Breakdown investigations in MIS and MS structures
Acta Phys. Polonica A, 71, 485-489, 1987.

A.P.Kovchavcev, G.L.Kurishev, K.O.Plostnikov, I.M.Subbotin, Zs.J.Horváth:
Rezonansnoje tunnelirovanie elektronov v bar'ere Schottky na arsenide gallija
[Resonance tunneling of electrons in GaAs Schottky barrier (in Russian)]
Fiz. Tekhn. Poluprovodnikov 21, 1944-1948, 1987.

Zs.J.Horváth:
Evaluation of the interface state energy distribution from Schottky I-V characteristics
J. Appl. Phys. 63, 976-978, 1988.

Zs.J.Horváth:
Comment on "Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights" [J. Appl. Phys. 61, 5159 (1987)]
J. Appl. Phys., 64, 443-444, 1988.

Zs.J.Horváth:
Domination of the thermionic-field emission in the reverse I-V characteristics of n-type GaAs Schottky contacts
J. Appl. Phys., 64, 6780-6784, 1988.

Zs.J.Horváth:
General interfacial layer expression for the equilibrium Schottky barrier height and its application to annealed Au-GaAs contacts
Appl. Phys. Lett., 54, 931-933, 1989.

Zs.J.Horváth, I.Gyúró, M.Németh-Sallay, P.Tüttõ:
Near-interface concentration reduction in n-type Au/Cr/GaAs Schottky contacts
Vacuum, 40, 201-203, 1990.

Zs.J.Horváth:
The effect of the metal-semiconductor interface on the barrier height in GaAs Schottky junctions
Vacuum, 41, 804-806, 1990.

Zs.J.Horváth:
Two-phase structure of plasma-polymerized thiophene-passivated GaAs Schottky-like metal-insulator-semiconductor diodes
J. Appl. Phys. 68, 5899-5901, 1990.

Zs.J.Horváth:
New electrical characterization of the metal-semiconductor interface in GaAs Schottky junctions
Acta Phys. Polonica A, 79, 167-170, 1991.

B.Pécz, G.Radnóczi, Zs.J.Horváth, P.B.Barna, E.Jároli, J.Gyulai:
The effect of ion beam treatment and subsequent annealing on Au/GaAs contacts
J. Appl. Phys., 71, 3408-3413, 1992.

Zs.J.Horváth, G.Molnár, B.Kovács, G.Petõ, M.Andrási, B.Szentpáli:
Effect of crystallization on the electrical and interface characteristics of GdSi2/p-Si Schottky junctions
J. Crystal Growth, 126, 163-167, 1993.

Zs.J.Horváth:
Effect of ion-bombardment on apparent barrier height in GaAs Schottky junctions
Acta Phys. Hung., 74, 57-64, 1994.

Zs.J.Horváth, B.Pécz, E.Jároli, M.Németh-Sallay:
Electrical behaviour of ion-mixed Au/n-GaAs contacts
Acta Phys. Hung., 74, 65-71, 1994.

Zs.J.Horváth:
Comment on "Current-voltage characteristics and interface state density of GaAs Schottky barrier" [Appl. Phys. Lett. 62, 2560 (1993)]
Appl. Phys. Lett. 65, 511-512, 1994.

Zs.J.Horváth, A.Bosacchi, S.Franchi, E.Gombia, R.Mosca, A.Motta:
Anomalous thermionic-field emission in epitaxial Al/n-AlGaAs Schottky junctions
Mat. Sci. Engng. B28, 429-432, 1994.

M.Ádám, Zs.J.Horváth, I.Bársony, L.Szölgyémy, E.Vázsonyi, Vo Van Tuyen:
Investigation of electrical properties of Au/porous Si/Si structures
Thin Solid Films, 255, 266-268, 1995.

Zs.J.Horváth, Vo Van Tuyen:
Comment on "Influence of barrier height distribution on the parameters of Schottky diodes" [Appl. Phys. Lett. 65, 575 (1994)]
Appl. Phys. Lett., 66, 3068, 1995.

Zs.J.Horváth, A.Bosacchi, S.Franchi, E.Gombia, R.Mosca, D.Biondelli:
Electrical behaviour of epitaxial Al/n-Al_0.25Ga_0.75As junctions: effect of the composition of undoped Al_xGa_1-xAs cap layer
Vacuum, 46, 959-961, 1995.

Zs.J.Horváth:
Lateral distribution of Schottky barrier height: a theoretical approach
Vacuum, 46, 963-966, 1995.

B.Kovács, G.Molnár, L.Dózsa, G.Petõ, M.Andrási, J.Karányi, Zs.J.Horváth:
Current-voltage anomalies in polycrystalline GdSi2/p-Si Schottky junctions due to grain boundaries
Vacuum, 46, 983-985, 1995.

Zs.J.Horváth:
Comment on "Breakdown Voltage of High-Voltage GaAs Schottky Diodes"
Solid-State Electron., 38, 1835-1836, 1995.

Zs.J.Horváth:
Comment on "Analysis of I-V measurements on CrSi₂-Si Schottky structures in a wide temperature range"
Solid-State Electron., 39, 176-178, 1996.

Zs.J.Horváth, M.Ádám, Cs.Dücsõ, I.Pintér, Vo Van Tuyen, I.Bársony, E.Gombia, R.Mosca, Zs.Makaró:
Electrical characterisation of Al/n-Si/p-Si Schottky junctions prepared by plasma immersion implantation
Solid-State Electron., 42, 221-228, 1998.

J.Ivanco, Zs.J.Horváth, Vo Van Tuyen, C.Coluzza, J.Almeida, A.Terrasi, B.Pécz, Gy.Vincze, G.Margaritondo:
Electrical characterisation of Au/SiO_x/n-GaAs junctions
Solid-State Electron., 42, 229-233, 1998.

B.Cvikl, D.Korosak and Zs.J.Horváth:
Comparative study of I-V characteristics of ICB deposited Ag/p-Si(100) and Ag/n-Si(111) Schottky junctions
Vacuum, 50, 385-393, 1998.

Zs.J.Horváth, M.Ádám, I.Pintér, B.Cvikl, D.Korosak, T.Mrdjen, Vo Van Tuyen, Zs.Makaró, Cs.Dücsõ, I.Bársony:
Anomalous temperature dependence of series resistance in Ag/Si and Al/Si Schottky junctions
Vacuum, 50, .417-419, 1998.

Zs.J Horváth, E.Gombia, D.Pal, Cs.Kovacsics, G.Capannese, I.Pintér, M.Ádám, R.Mosca, Vo Van Tuyen, L.Dózsa:
Effect of defect bands on the electrical characteristics of irradiated GaAs and Si
Phys. Stat. Sol. (A), 171, 311-317, 1999.

Zs.J.Horváth, L.Dózsa, Vo Van Tuyen, B.Põdör, Á.Nemcsics, P.Frigeri, E.Gombia, R.Mosca, S.Franchi:
Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures
Thin Solid Films, 367, 89-92, 2000.

L.Dózsa, Zs.J.Horváth, Vo Van Tuyen, B.Põdör, T.Mohácsy, S.Franchi, P.Frigeri, E.Gombia, R.Mosca:
The effect of InAs quantum layers and quantum dots on the electrical characteristics of GaAs structures
Microelectronic Engineering, 51-52, 85-92, 2000.

L.Dózsa, Zs.J.Horváth, G.L.Molnár, G.Petõ, C.A.Dimitriadis, L.Papadimitriou, J.Brini, G.Kamarinos:
Electrical and low frequency noise properties of Gd and GdCo silicide contacts on n type Si
Semicond. Sci. Technol. 15, 653-657, 2000.

L.Dózsa, Zs.J.Horváth, Vo Van Tuyen, B.Szentpáli:
The electric properties of wafer bonded Si p-n junctions
Romanian J. Information Science and Technol., 3, 17-27, 2000.

Zs.J.Horváth, M.Ádám, Vo Van Tuyen, Cs.Dücsõ, B.Szentpáli, F.Giacomozzi, D.Pasquarello, K.Hjort, P.Tüttõ:
Electrical study of insulator films for microwave applications
Romanian J. Information Science and Technol., 3, 49-56, 2000.

Zs. J.Horváth, V.P.Makhniy, M.V.Demych, Vo Van Tuyen, J Balázs, I.Réti, P.M.Gorley, K.S.Ulyanitsky, P.P. Horley, D.Stifter, H.Sitter, L.Dózsa:
Electrical and photoelectrical behaviour of CdTe structures
Mater. Sci. Engng., B80, 156-159, 2001.

Zs.J.Horváth, Vo Van Tuyen, S.Franchi, A.Bosacchi, P.Frigeri, E.Gombia, R.Mosca, D. Pal, I.Kalmár, B.Szentpáli:
Engineered Schottky barriers on n-In_0.35Ga_0.65As
Mater. Sci. Engng., B80, 248-251, 2001.

Zs.J.Horváth, P.Frigeri, S.Franchi, Vo Van Tuyen, E.Gombia, R.Mosca, L.Dózsa:
Current instabilities in GaAs/InAs self-aggregated quantum dot structures
Appl. Surf. Sci., 190, 222-225, 2002.

Zs.J.Horváth, K. Jarrendahl, M.Ádám, I.Szabó, Vo Van Tuyen, Zs.Czigány:
Electrical peculiarities in Al/Si/Ge/.../Ge/Si and Al/SiGe/Si structures
Appl. Surf. Sci., 190, 403-407, 2002.

Zs.J.Horváth, M.Ádám, I.Szabó, M.Serényi, Vo Van Tuyen:
Modification of Al/Si interface and Schottky barrier height with chemical treatment
Appl. Surf. Sci., 190, 441-444, 2002.

N.L.Dmitruk, O.Yu.Borkovskaya, I.N.Dmitruk, S.V.Mamykin, Zs.J.Horváth, I.B.Mamontova:
Morphology and interfacial properties of microrelief metal/semiconductor interface
Appl. Surf. Sci., 190, 455-460, 2002.

E. M. Pashaev, S. N. Yakunin, A. A. Zaitsev, V. G. Mokerov, Yu. V. Fedorov, Zs. J.
Horváth, R. M. Imamov:
InAs quantum dots in multilayer GaAs-based heterostructures
Phys. Stat. Sol. (A), 195, 204-208, 2003.

Yu. M. Ivanov, V. M. Kanevsky, V. F. Dvoryankin, V. V. Artemov, A. N. Polyakov, A. A.
Kudryashov, E. M. Pashaev, Zs. J. Horváth:
The possibilities of using semi-insulating CdTe crystals as detecting material for X-ray imaging
radiography
Phys. Stat. Sol. (C), 0, 840-844, 2003.

Yu. M. Ivanov, A. N. Polyakov, V. M. Kanevsky, E.M. Pashaev, Zs. J. Horváth:
Detection of polymorphous transformations in CdTe by dilatometry
Phys. Stat. Sol. (C), 0, 889-892, 2003.

E. M. Pashaev, V. N. Peregudov, S. N. Yakunin, A. A. Zaitsev, T. G. Kolesnikova, Zs. J.
Horváth:
The effect of X-ray radiation on the structural and electrical properties of CdZnTe solid solution
Phys. Stat. Sol. (C), 0, 897-901, 2003.

Zs. J. Horváth, V. Rakovics, B. Szentpáli, S. Püspöki:
Schottky junctions on n-type InP for zero bias microwave detectors
Phys. Stat. Sol. (C), 0, 916-921, 2003;

N.L.Dmitruk, O.Yu.Borkovskaya, Zs.J.Horváth, I.B.Mamontova, S.V.Mamykin:
Fluctuation model for rough metal/semiconductor interface
Phys. Stat. Sol. (C), 0, 933-938, 2003.

L. Dózsa, Zs. J. Horváth, P. Hubik, J. Kristofik, J. J. Mares, E. Gombia, P. Frigeri, R. Mosca,
S. Franchi, B. Pécz, L. Dobos:
Investigation of defects created by growth of InAs quantum dots in GaAs
Phys. Stat. Sol. (C), 0, 975-980, 2003.

V. P. Makhniy, V. V. Mel'nyk, I. V. Tkachenko, P. N. Gorley, Zs. J. Horváth, P. P. Horley,
Yu. V. Vorobiev:
Electrical properties of UV detectors based on zinc selenide with modified surface barrier
Phys. Stat. Sol. (C), 0, 1039-1043, 2003.

Zs. J. Horváth, M. Serényi, M. Ádám, I. Szabó, E. Badaljan, V. Rakovics:
Al/a-SiGe:H/c-Si m-i-p diodes - a new type of heterodevices
Phys. Stat. Sol. (C), 0, 1066-1069, 2003;

Zs. J. Horváth, V. Rakovics, B. Szentpáli, S. Püspöki, K. **ánsk*:
InP Schottky junctions for zero bias detector diodes
Vacuum, 71, 113-116, 2003.

Last updated: June 11, 2004.