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Last updated: June 11, 2004.

Invited (review) lectures

Zs.J.Horváth:
Electrical characterisation of Schottky junctions: Anomalies, parameter extraction and barrier height engineering
9th International Workshop on Physics of Semiconductor Devices, Dec. 16-20, 1997, Delhi, India.
Published in: Physics of Semiconductor Devices, Narosa Publishing House, New Delhi, India, 1998, (Eds. V. Kumar,
S. K. Agarwal), pp. 1085-1092.

Zs.J.Horváth:
Possibilities of interface characterisation in Schottky-like junctions by electrical measurements
International Workshop on Diagnostics of Solid State Surfaces and Interfaces, June 24-25, 1998, Bratislava, Slovakia, Book of Abstracts pp. 8-9.

Zs.J.Horváth:
Electrical breakdown in semiconductor structures
3rd International School-Conference on Physical Problems in Material Science of Semiconductors, Sept. 7-11, 1999, Chernivtsi, Ukraine, Abstract Booklet p.234.

Zs.J.Horváth:
Electrical breakdown in MIS and MS systems
10th International Workshop on Physics of Semiconductor Devices, Dec. 14-18, 1999, Delhi, India.
Published in: Physics of Semiconductor Devices, Allied Publisher Ltd., New Delhi, India, 2000, (Eds. V. Kumar,
S. K. Agarwal), pp. 760-767.

Zs.J.Horváth:
Spatial inhomogeneities of metal-semiconductor junctions
Workshop on Solid State Surfaces and Interfaces II, SSSI-II, June 20-22, 2000, Bratislava, Slovakia, Book of Extended Abstracts p. 26.

Zs. J. Horváth:
Vertical electrical behaviour of GaAs and Si based low dimensional structures
11th International Workshop on Physics of Semiconductor Devices, Dec. 11-15, 2001, Delhi, India.
Published in: Physics of Semiconductor Devices, Allied Publisher Ltd., New Delhi, India, 2002, (Eds. V. Kumar,
P. K. Basu), pp. 265-272.

Zs. J. Horváth:
Vertical electrical behaviour of amorphous and crystalline Al/SiGe/Si structures
3rd SSSI: Solid State Surfaces and Interfaces, Nov. 19-21, 2002, Smolenice Castle, Slovak
Republic
Published in Proc. 3rd SSSI: Solid State Surfaces and Interfaces, Nov. 19-21, 2002,
Smolenice Castle, Slovak Republic,Comenius University Press, Bratislava, 2002, ( Eds. K.
Gmucová, R. Brunner), pp.23-25.

Zs. J. Horváth:
Vertical electrical behaviour of amorphous and crystalline Si/Ge and SiGe/Si structures
12th Int. Workshop Physics of Semiconductor Devices, Dec. 16-20, 2003, Madras, India
Published in: Physics of Semiconductor Devices, Narosa Publishing House, New Delhi, 2004,
(Eds. K. N. Bath and A. DasGupta), pp. 89-94.


Zs. J. Horváth:
Vertical electrical behaviour of silicon-based MS and MIS structures
Int. Conf. Silicon - News in Science and Technology, Febr. 29 - March 3, 2004. Podbanské,
Slovakia
Published in: Proc. Int. Conf. Silicon - News in Science and Technology, Febr. 29 - March 3,
2004. Podbanské, Slovakia, (Eds. S. Jurecka, J. Müllerová), pp.32-39.


Zs. J. Horváth:
Semiconductor nanocrystals in dielectrics: Optoelectronic and memory applications of related
metal-insulator-silicon devices
Conf. Silicon 2004, June 5-9, 2004, Irkutsk, Russia.

Zs. J. Horváth:
Electrical behaviour of contacts to III-V semiconductors
4th SSSI: Solid State Surfaces and Interfaces, Nov. 8-11, 2004, Smolenice Castle, Slovak
Republic.

Last updated: June 11, 2004.

Welcome page   Curriculum Vitae     Main results    Projects:  SiGe structures  Thin film effects
Publications:  Most important    Refereed journals   Other journals   Conference proc.    Hungarian