Last updated: June 11, 2004.
Invited (review) lectures
Zs.J.Horváth:
Electrical characterisation of Schottky junctions: Anomalies, parameter extraction
and barrier height engineering
9th International Workshop on Physics of Semiconductor Devices, Dec. 16-20,
1997, Delhi, India.
Published in: Physics of Semiconductor Devices, Narosa
Publishing House, New Delhi, India, 1998, (Eds. V. Kumar,
S. K. Agarwal), pp. 1085-1092.
Zs.J.Horváth:
Possibilities of interface characterisation in Schottky-like junctions by
electrical measurements
International Workshop on Diagnostics of Solid State Surfaces and Interfaces,
June 24-25, 1998, Bratislava, Slovakia, Book of Abstracts pp. 8-9.
Zs.J.Horváth:
Electrical breakdown in semiconductor structures
3rd International School-Conference on Physical Problems in Material Science
of Semiconductors, Sept. 7-11, 1999, Chernivtsi, Ukraine, Abstract Booklet
p.234.
Zs.J.Horváth:
Electrical breakdown in MIS and MS systems
10th International Workshop on Physics of Semiconductor Devices, Dec. 14-18,
1999, Delhi, India.
Published in: Physics of Semiconductor Devices, Allied
Publisher Ltd., New Delhi, India, 2000, (Eds. V. Kumar,
S. K. Agarwal), pp. 760-767.
Zs.J.Horváth:
Spatial inhomogeneities of metal-semiconductor junctions
Workshop on Solid State Surfaces and Interfaces II, SSSI-II, June 20-22, 2000,
Bratislava, Slovakia, Book of Extended Abstracts p. 26.
Zs. J. Horváth:
Vertical electrical behaviour of GaAs and Si based
low dimensional structures
11th International Workshop on Physics of Semiconductor Devices, Dec. 11-15,
2001, Delhi, India.
Published in: Physics of Semiconductor Devices, Allied
Publisher Ltd., New Delhi, India, 2002, (Eds. V. Kumar,
P. K. Basu), pp. 265-272.
Zs. J. Horváth:
Vertical electrical behaviour of amorphous and crystalline Al/SiGe/Si structures
3rd SSSI: Solid State Surfaces and Interfaces, Nov. 19-21, 2002, Smolenice
Castle, Slovak
Republic
Published in Proc. 3rd SSSI: Solid State Surfaces and Interfaces, Nov. 19-21,
2002,
Smolenice Castle, Slovak Republic,Comenius University Press, Bratislava,
2002, ( Eds. K.
Gmucová, R. Brunner), pp.23-25.
Zs. J. Horváth:
Vertical electrical behaviour of amorphous and crystalline Si/Ge and SiGe/Si
structures
12th Int. Workshop Physics of Semiconductor Devices, Dec. 16-20, 2003, Madras,
India
Published in: Physics of Semiconductor Devices, Narosa
Publishing House, New Delhi, 2004,
(Eds. K. N. Bath and A. DasGupta), pp. 89-94.
Zs. J. Horváth:
Vertical electrical behaviour of silicon-based MS and MIS structures
Int. Conf. Silicon - News in Science and Technology, Febr. 29 - March 3,
2004. Podbanské,
Slovakia
Published in: Proc. Int. Conf. Silicon - News in Science
and Technology, Febr. 29 - March 3,
2004. Podbanské, Slovakia, (Eds. S. Jurecka, J. Müllerová),
pp.32-39.
Zs. J. Horváth:
Semiconductor nanocrystals in dielectrics: Optoelectronic and memory applications
of related
metal-insulator-silicon devices
Conf. Silicon 2004, June 5-9, 2004, Irkutsk, Russia.
Zs. J. Horváth:
Electrical behaviour of contacts to III-V semiconductors
4th SSSI: Solid State Surfaces and Interfaces, Nov. 8-11, 2004, Smolenice
Castle, Slovak
Republic.
Last updated: June 11, 2004.
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