MÛSZAKI FIZIKAI ÉS ANYAGTUDOMÁNYI KUTATÓ INTÉZET
HUNGARIAN ACADEMY OF SCIENCES
RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE
B. Szentpáli, Ph.D.
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MÛSZAKI FIZIKAI ÉS ANYAGTUDOMÁNYI KUTATÓ INTÉZET HUNGARIAN ACADEMY OF SCIENCES RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE |
| Head:
B. Szentpáli, Ph.D. |
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Thin film effects in semiconductor
structures
RESEARCH PROJECT (OTKA T035272)
Sponsor: National
Research Fund (OTKA)
Contract No.: T035272.
| Co-ordinator:
Participants: |
Zsolt
J. Horváth
B. Põdör V. Rakovics I. Szabó Vo Van Tuyen |
Duration: 2001-2004.
Aim of the project:
The presence of thin films and layers in semiconductor structures can influence
their electrical behaviour significantly. E.g., the presence of a quantum
well or a layer containing quantum dots, can yield unusual electrical properties,
while a thin semiconductor layer with opposite conductivity or a thin insulator
film at the semiconductor surface can be used for the engineering of Schottky
barrier height. The aim of this project is to study the electrical behavior
of different semiconductor structures containing thin layers or films,
and to analyse the physical origin of the obtained electrical characteristics.
Related papers and lectures:
Zs. J. Horváth, Sz. Varga, L. Csontos,
J. Karányi, A. I. A. Elsawirki, Vo Van Tuyen, K. Somogyi, I. Kalmár:
Comparison of CSVT, LPE, and VPE GaAs and AlGaas
layers by electrical measurements
VI Polish Conf. on Crystal Growth PCCG-VI, May
20-23, 2001, Poznan, Poland, Abstract Book, p.97.
Zs. J. Horváth, M. Ádám,
I. Szabó, Vo Van Tuyen:
Modification of Al/Si interface and Schottky
barrier height with chemical treatment
8th Int. Conf. Formation of Semicond. Interfaces,
June 10-15, 2001, Sapporo, Japan, Final Program & Collected Abstracts,
p.230.
Zs.J.Horváth, M.Ádám, P.Godio,
G.Borionetti, I.Szabó, E.Gombia, Vo Van Tuyen:
Passivation of Al/Si interface with chemical
treatment: Schottky barrier height and plasma etch induced defects
Proc. 9th Int. Autumn Meeting "Gettering and
Defect Engineering in Semiconductor Technology GADEST 2001, Sept. 30 -
Oct. 3, 2001, Santa Tecla, Italy (Eds. V.Raineri, F.Priolo, M.Kittler,
H.Richter, Scitec Publications Ltd., Zurich, 2002);
Solid-State Phenomena, 82-84, 255-258,
2002.
Zs.J.Horváth, S.Franchi, ABosacchi, P.Frigeri,
E.Gombia, R.Mosca, Vo Van Tuyen:
Defect related current
instabilities in InAs/GaAs and AlGaAs/GaAs structures?
Proc. 9th Int. Autumn Meeting "Gettering and
Defect Engineering in Semiconductor Technology GADEST 2001, Sept. 30 -
Oct. 3, 2001, Santa Tecla, Italy (Eds. V.Raineri, F.Priolo, M.Kittler,
H.Richter, Scitec Publications Ltd., Zurich, 2002);
Solid-State Phenomena, 82-84, 565-567,
2002.
B. Szentpáli, V. Rakovics, Zs. J. Horváth,
S. Püspöki:
Development of InP Schottky diodes
Third Workshop on Micromachined Circuits for
Microwave and Millimeter Wave Applications "MEMSWAVE", October 9, 2001,
Sinaia, Romania.
Zs.J.Horváth:
Vertical electrical behaviour
of GaAs and Si based low dimensional structures
in: Physics of Semiconductor Devices, Allied
Publisher Ltd., New Delhi, India, 2002, (Eds. V. Kumar and P. K. Basu),
pp. 265-272.
V.Rakovics, J.Balázs, B.Põdör,
A.L.Tóth, Zs.J.Horváth, Z.E.Horváth:
Growth and properties of InxGa1-xAsySb1-y
on GaSb
in: Physics of Semiconductor Devices, Allied
Publisher Ltd., New Delhi, India, 2002, (Eds. V.
Kumar and P. K. Basu), pp. 1195-1199.
Zs.J.Horváth, P.Frigeri, S.Franchi, Vo
Van Tuyen, E.Gombia, R.Mosca, L.Dózsa:
Current instabilities in
GaAs/InAs self-aggregated quantum dot structures
Appl. Surf. Sci., 190, 222-225, 2002.
Zs.J.Horváth, M.Ádám, I.Szabó,
M.Serényi, Vo Van Tuyen:
Modification
of Al/Si interface and Schottky barrier height with chemical treatment
Appl. Surf. Sci., 190, 441-444, 2002.
Zs. J. Horváth, V. Rakovics, B. Szentpáli,
S. Püspöki:
Schottky junctions on
n-type InP for zero bias microwave detectors
6th Int. Workshop on Expert Evaluation and Control
of Compound Semiconductor Materials and Technolgies, EXMATEC 2002, May
26-29, 2002, Budapest, Hungary, Book of Abstracts p.109;
Phys. Stat. Sol., accepted.
Zs. J. Horváth, Sz. Varga, K. Somogyi,
A. I. A. Elsawirki, L. Csontos, and J. Karányi:
Interaction of Al metallization with GaAs and
AlGaAs - an electrical study
6th Int. Workshop on Expert Evaluation and Control
of Compound Semiconductor Materials and Technolgies, EXMATEC 2002, May
26-29, 2002, Budapest, Hungary, Book of Abstracts p.110.
L. Dózsa, Zs. J. Horváth, E. Gombia,
P. Frigeri, S. Franchi, R. Mosca, P. Hubik, J. Kristofik, J. J. Mares,
B. Pécz, L. Dobos:
Investigation of defects created by growth of
InAs quantum dots in GaAs
6th Int. Workshop on Expert Evaluation and Control
of Compound Semiconductor Materials and Technolgies, EXMATEC 2002, May
26-29, 2002, Budapest, Hungary, Book of Abstracts p.163.
Zs. J. Horváth, V. Rakovics, B. Szentpáli,
S. Püspöki, K. Zdánsky:
InP Schottky junctions for zero bias detector
diodes
9th Joint Vacuum Conf., JVC-9, June 16-20, 2002,
Schloss Seggau, Austria, Final Programme
and Book of Abstracts p. 51.
Zs. J. Horváth, M. Ádám,
I. Szabó, L. K. Orlov, A. V. Potapov, V.A. Tolomasov, B. Cvikl,
D. Korosak, E. Pashaev, S. Yakunin:
Effect of surface treatment on the electrical
behaviour of Al/Si and Al/SiGe junctions
9th Joint Vacuum Conf., JVC-9, June 16-20, 2002,
Schloss Seggau, Austria, Final Programme and Book of Abstracts p. 50.
Zs. J. Horváth, V. Rakovics, Z. Pászti:
InP Schottky structures
with Pt nanoparticles
Proc. Int. Conf. on Solid States Crystals, Oct.
14-18, 2002, Zakopane, Poland, submitted.
Last updated: October 30, 2002.
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