Nondestructive characterization Lab:
The Institute of Technical Physics and Materials Science of the Centre for Energy has decades of experience in non-destructive testing certified according to the ISO 9001: 2009 quality assurance system.
Material characterization methods offered for external users and partners: Non-destructive optical and magnetic measurement of surface nanostructures and materials including: spectroscopy; magnetic material testing; biosensors; curvature of surfaces; surface contamination and quality; water pollution tests
Sample properties to characterize:
- layer thickness (0.5-1000 nm);
- optical refractive index (accuracy: ~ 0.001);
- quality of interfaces;
- porosity (e.g., voids content in the porous layer);
- surface nanoroughness;
- layer composition in some cases (e.g., Si nanoparticle content in silica);
- measurement of carbon phases;
- crystallinity (lattice disorder of single crystals, disintegration);
- brittleness and material properties of steel structures
- crystal and band structure of semiconductors
Clean lab (Class 10-10000) and Mask facility
The Microsystems and Nanosensors Laboratories run a unique semiconductor manufacturing facility in Hungary comprising two clean labs (300 m2 + 160 m2 – Class 100-10000) with complete Si-CMOS technology line together with a mask shop, the only complete Si CMOS technology. The laboratory was selected as a Strategic National Research Infrastructure by NIH.
The main tasks of the Departments are the research and development of physical, chemical/biochemical sensors and integrated systems:
• Si Microtechnology with special emphasis on development of MEMS devices and related technologies, materials, structural and functional characterizations.
• Development and fabrication of microfluidic systems, their application in new fields of medical diagnostics and lab-on-a-chip systems – BioMEMS.
• Sensor development with special emphasis on autonomous sensor systems, physical, chemical, mechanical, opical and thermal microsensors – MEMS.
• Development of semiconductor nanodevices, the sythesis and charactirization of quasi-one-dimensional semiconducting nanostrucrures, their integratation into functional sensoric, optoelectronic and photovoltaic devices – NEMS.
• Development and small scale production of NIR LEDs of unique physical parameters.
Fundamental research on:
• sensing principles
• novel materials and nanostructures
• novel 3D fabrication techniques
• ion-solid interaction for supporting MEMS development.
Device and material characterization widely used in our projects:
• SEM, TEM, EDX • Spectroscopic Ellipsometry
• Electrical and mechanical characterizations • Scanning Microprobes
• Ion beam analysis methods • FTIR and Raman scattering
• Optical characterizations
The Department runs two clean labs (300 m2 + 160 m2 – Class 100-10000) comprising a complete Si-CMOS processing line and a mask shop, unique facility in Hungary. The technology allows to manufacture layers, patterned structures and devices with line resolution of 1 µm by optical and down to ≈10 nm by e-beam lithography on 3” and 4” Si and glass wafers.
Competences (available as service for academic, industrial partners and customers):
• High temperature annealing, diffusion and oxidation; Rapid Thermal Treatment;
• Low Pressure Chemical Vapour Deposition of poly-Si, SiO2 and Si3N4 layers;
• Low Temperature Chemical Vapour Deposition;
• Plasma Enhanced Atomic Layer Deposition;
• Physical Thin Film Depositions – Electron beam evaporation, DC and RF Sputtering;
• Ion implantation;
• Reactive Ion Etching, Deep Reactive Ion Etching;
• Photolithography with back-side alignment and Nanoimprinting;
• E-beam lithography;
• Nanopatterning, deposition and etching by Focused Ion-Beam;
• Wet chemical treatments;
• Electro-chemical porous Si formation;
• Liquid Phase Epitaxy of III-V compound semiconductors;
• Mask design, laser pattern generator;
• Polymer (PDMS, SU8, Polyimide) structuring by photolithography and micro-molding techniques,
• Chip dicing, packaging especially for sensor applications;
• Materials and structural analysis & characterization:, SEM, FIB, EDX, Atomic Force Microscopy, Electrochemical Impedance Spectroscopy, Stylus Profiler;
• Electrical and functional modelling and characterization.
- Electron Microscopy, Auger and Scanning Probe Lab
- Thin film, Surface Physics and Structures
- Ion Implantation and Ion Beam Analysis
- Semiconductor Lasers and different LPE Techniques
- Porous silicon preparation and studies
- Carbon nanotubes, preparation and studies
- Ceramics, high pressure, high temperature press, refractory metals