Last name: BÁRSONY

First name: István

Born: July 19, 1948, in Nyíregyháza, Hungary

Degree: MSc.E.E., Ph.D., DSc., habil

Title: Director, Professor

Affiliation: Research Institute for Technical Physics and Materials Science, MTA MFA

P.O.Box 49, 1525 Budapest, Hungary

Phone: 36-1-3922225

Fax: 36-1-3922226


From 1971-1981 with the Industrial Research Institute for Electronics HIKI, Budapest working on MOS IC design, processing and characterization. Visiting scientist at the Dep. Electrical Engineering of the Technische Hoogeschool Twente in 1978. With the Microelectronics Co. heading the group of MOS process- and structural characterization from 1982-1992.

1983-1986 assignment with the Research Development Corporation of Japan, working on "Static Induction image sensors" in the Nishizawa Perfect Crystal Project of the ERATO program. Head of the Functional Device Group at Hamamatsu Photonics K.K. in Hamamatsu, Japan.

1988-1993 visiting scientist and guest lecturer of the University of Twente, Enschede in the Netherlands. Project leader on "Rapid Thermal Multi-Processing" with the Dutch Foundation for Technical Sciences STW and the Dutch Foundation of Fundamental Research on Matters FOM, from 1993-1998. From 1999 assignment as visiting scientist with the Institut für Integrierte Schaltungen der Fraunhofer Gesellschaft, Erlangen, Germany.

From 1993 with the Hungarian Academy of Sciences. Currently director of the Research Institute for Technical Physics and Materials Science, MTA MFA. Professor of Nanotechnology at the Faculty of Technical Informatics of the University of Veszprém, Hungary. Private professor at the Chair for Electron Devices of the the Faculty of Electrical and Informatics Engineering of the Budapest University of Technlogy and Economics

Head of the Scientific Committee for Electronic Devices and Technologies of the Hungarian Academy of Sciences. Member of the Hungarian Academy of Engineering. Active member of the Materials Research Society and IEEE. Member of the Eötvös Loránd Physical Society and the Scientific Society for Telecommunication in Hungary. Author and co-author of over 100 international publications in the field of device physics and silicon processing. Holds 13 Japanese and international patents concerning novel types of semiconductor devices. Recipient of the "Most Significant Invention Award" of the Science and Technology Agency of Japan in 1991. Hungarian member of the EUROSENSORS International Steering Committee.

Among others Hungarian leader of the European projects MULTICHESS2 /PECO PL932049, COPERNICUS PORSIS CP94-0963 and technical co-ordinator of COPERNICUS RESPECT CIPA-CT94-0131 Hungarian Coordinator of the FP5 project SAFEGAS on Explosion proof gas monitoring.

Recent research activities focus on high k dielectrics, on solar cells, on in situ, real-time nondestructive materials characterization techniques for process monitoring, Si-based MEMS and photonic devices, biosensing, surface functionalization, low dimensional structures, selfassembly.


List of publications of the last five years

U. Watjen, I. Bársony, G.W.Grime and I. Rajta, “On the interpretation of micro-PIXE measurements on a prototype microstructured reference material”, Nucl. Instrum Meth in Physics Research B, 150 (1999) 535-537

I. Pintér, A.H. Abdulhadi, Zs. Makaró, N.Q. Khanh, M. Ádám, I. Bársony, J. Poortmans, S. Sivothaman, Hai-Zhi Song, G. J. Adriaenssens, “Plasma immersion ion implantation for shallow junctions in silicon”, Appl. Suf. Sci. 138-139 (1999) 224-227

K. Molnár, T. Mohácsy, P. Varga, É. Vázsonyi, I. Bársony: "Characterization of ITO/porous silicon LED structures" Journal of Luminescence 80 (1999) 91-97

S.D.Kolev, M. Ádám, Cs. Dücsõ, I. Bársony, C. Cobianu and A. van den Berg., “Thermal modelling of a porous silicon-based pellistor-type catalytic flammable gas sensor with two supporting beams”, Microelectronics Journal, 31 (2000) 339-342

U. Wätjen, I. Bársony and Cs. Dücsõ: A Novel Micro-structured Reference Material for Ion and X- ray Microbeam Analysis, Microchim. Acta 132, (2000)521-525

T. Mohácsy, M. Ádám, S. Kulinyi and I. Bársony: “High-Sensitivity Piezoresistive Pressure Detection by a Depletion Channel Metal-Oxide-Semiconductor Transistor [MOST] Bridge “ Sensors and Materials, 12 No. 4 (2000) 205-219

O. Polgár, M. Fried, T. Lohner, I. Bársony; “Comparison of algorithms used for evaluation of ellipsometric measurements: Random search, genetic algorithms, simulated annealing and hill climbing graph-searches”; Surface Science 457 (2000) 157-177

K. Molnár, T. Mohácsy, M. Ádám, I. Bársony: “Porous Silicon Light Emitting Diodes – mechanisms in the operation”, Optical Materials, 17 (2001) 111-116

O. Polgár, M. Fried, T. Lohner, and I. Bársony, “A combined topographical search strategy with ellipsometric application”, Journal of Global Optimization 19 (4) (2001) 383-401

Zs. Vízváry, P. Fürjes, I. Bársony, “Thermomechanical analysis of hotplates by FEM”, Microelectronics Journal 32 (2001) 833-837

P. Petrik, N. Q. Khánh, Z. E. Horváth, Z. Zolnai, T. Lohner, M. Fried, I.Bársony, J. Gyulai, C. Schmidt, C. Schneider, H. Ryssel, „Characterization of BaxSr1-xTiO3 films”, Mat.Sci. Semicon. Proc. 5 (2-3) (2002) 141-145

P. Petrik, N. Q. Khánh, Z. E. Horváth, Z. Zolnai, I. Bársony, T. Lohner, M. Fried, J. Gyulai, et al (11), "Characterisation of BaxSr1-xTiO3 films using spectroscopic ellipsometry, Rutherford backscattering spectrometry and X-ray diffraction”, J Non-Cryst. Solids 303 (1): 179-184 May 1 2002.

P. Fürjes, Zs. Vizváry, M. Ádám, A. Morrissey, Cs. Dücsõ and I. Bársony: “Thermal investigation of Micro-filament Heaters”, Sensors and Actuators A 99 (2002) 98-103

P. Fürjes, Zs. Vízváry, M. Ádám, I. Bársony, A. Morrissey and Cs. Dücsõ: „Materials and Processing for Realisation of Micro-hotplates Operated at Elevated Temperature”, Journal of Micromechanics and Microengineering 12 (2002) 425-429

E. Lukács, Zs. Vízváry, P. Fürjes, F. Riesz, Cs. Dücsõ and I. Bársony: “Determination of Deformation Induced by Thin Film Residual Stress in Structures of Millimeter Size”, Advanced Engineering Materials 4 – No. 8 (2002) 625-627

O.H. Krafcsik, Gy. Vida, K.V. Josepovits, P. Deák, Gy.Z. Radnóczi, Béla Pécz and I. Bársony: „Void-Free Epitaxial Growth of Cubic SiC Crystallites during CO Heat Treatment of Oxidized Silicon”, Mat. Sci. Forum, 389-393 (2002) 359-362

P. Fürjes, Cs. Dücsõ, M. Ádám, A. Morrissey, I. Bársony: „Materials and Processing for Realisation of Micro-hotplates Operated at Elevated Temperature”, Journal of Micromechanics and Microengineering 12 (2002) 425-429

J. Volk, M. Fried, O. Polgár, I. Bársony, “Optimisation of porous silicon based passive optical elements by means of spectroscopic ellipsometry”, Phys. Stat. Sol. (a), 197 No.1 (2003) 208-211

K. Molnár, T. Mohácsy, A.H. Abdulhadi, I. Bársony, „On the nature of metal-porous Si-single crystal silicon (MPS) diodes”, Phys. Stat. Sol. (a), 197 No. 2.( 2003) 446-451

B. Szentpáli, P. Gottwald, T. Mohácsy and I. Bársony, ”Low-frequency noise in porous Si LED”, Noise in Devices and Circuits, Ed. M.J. Dean, Z.Celik-Butler, M.E.Levinshtein, Proc. of SPIE Vol. 5113, (2003), 398-405

H. Csorbai, P. Fürjes, Gy. Hárs, Cs. Dücsõ, I. Bársony, E. Kálmán, P. Deák: “Microwave-CVD diamond protective coating for 3D structured silicon microsensors”, Materials Science Forum 414-4 (2003) 69-73


P. Petrik, N. Q. Khánh, Z. E. Horváth, Z. Zolnai, I. Bársony, T. Lohner, M. Fried, J. Gyulai, C. Schmidt, C. Schneider, H. Ryssel, "Non-destructive characterization of strontium bismuth tantalate films", Materials Science in Semiconductor Processing 5 (2003) 141.

J. Volk, J. Balázs, A.L.Tóth, I. Bársony, “Porous silicon multilayers for sensing by tuneable IR –transmission filtering”, Sensors and Actuators B 100 (2004) 163-167

J. Volk, M. Fried, A.L. Tóth and I. Bársony, “The ideal vehicle for optical model development: porous silicon multilayers”, Thin Solid Films 455-456 (2004) 535-539